• 제목/요약/키워드: Ti capping

검색결과 46건 처리시간 0.044초

$TiO_2$ 도입에 따른 ZnO 졸에서의 단일벽 탄소나노튜브의 분산안정성 및 그 투명전도성 필름의 고온 안정성 (Titania-assisted dispersion of carboxylated single-walled carbon nanotubes in ZnO sol for transparent conducting films with high thermal stability)

  • 김보경;한중탁;정희진;정승열;이건웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.277-277
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    • 2010
  • We present facile chemical route stabilizing dispersion of carboxylated single-Walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and the thermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

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$TiO_2$ 도입에 따른 ZnO 졸에서의 단일벽 탄소나노튜브의 분산안정성 및 그 투명전도성 필름의 고온 안정성 (Titania-assisted dispersion of carboxylated single-walled carbon nanotubes in ZnO sol for transprent conducting films with high thermal stability)

  • 김보경;한중탁;;정희진;정승열;이건웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.41-41
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    • 2010
  • We present facile chemical route stabilizing dispersion of carboxylated single-walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and thethermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

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Ag층을 이용한 Sn과 In의 무 플럭스 접합 (Fluxless Bonding Method between Sn and In Bumps Using Ag Capping Layer)

  • 이승현;김영호
    • 마이크로전자및패키징학회지
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    • 제11권2호
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    • pp.23-28
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    • 2004
  • 본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다.

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Co-Silicide Device Characteristics in Embedded DRAM

  • Kim, Jong-Chae;Kim, Yeong-Cheol;Kim, Byung-Kook
    • 한국결정학회지
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    • 제12권3호
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    • pp.162-165
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    • 2001
  • The EDL (Embedded DRAM and Logic) technologies with stack cell capacitors based on NO dielectric and Co-silicided source/drain junctions using a Ti capping material, were successfully implemented. The employed Co-silicided film exhibited junction leakage characteristics comparable to those of non-silicided junctions. Improved device characteristics without degradation of I/sub off/ was also achieved.

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NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석 (Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$)

  • 윤장근;오순영;황빈봉;김용진;지희환;김용구;차한섭;허상범;이종근;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.391-394
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    • 2004
  • In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

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무전해 도금법으로 제조된 Co(Re,P) capping layer제조 및 특성 평가 (Synthesis and Characterization of The Electrolessly Deposited Co(Re,P) Film for Cu Capping Layer)

  • 한원규;김소진;주정운;조진기;김재홍;염승진;곽노정;김진웅;강성군
    • 한국재료학회지
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    • 제19권2호
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    • pp.61-67
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    • 2009
  • Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

Study of Thermal Stability of Ni Silicide using Ni-V Alloy

  • Zhong, Zhun;Oh, Soon-Young;Lee, Won-Jae;Zhang, Ying-Ying;Jung, Soon-Yen;Li, Shi-Guang;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok;Kim, Yeong-Cheol
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.47-51
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    • 2008
  • In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

Development of Click Chemistry in Polymerization and Applications of Click Polymer

  • Karim, Md. Anwarul
    • 고무기술
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    • 제13권1호
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    • pp.1-9
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    • 2012
  • Click chemistry had enjoyed a wealthy decade after it was introduced by K.B.Sharpless and his co-worker on 2001. Since there is no optimized method for synthesis of click polymer, therefore, this paper introduced three click reaction methods such as catalyst, non-catalyst and azide-end capping for fluorene-based functional click polymers. The obtained polymers have reasonable molecular weight with narrow PDI. The polymers are thermally stable and almost emitted blue light emission. The synthesized fluorene-based functional click polymers were characterized to compare the effect of click reaction methods on polymer electro-optical properties as well as device performance on quasi-solid-state dye sensitized solar cells (DSSCs) applications. The DSSCs with configuration of $SnO_2:F/TiO_2/N719$ dye/quasi-solid-state electrolyte/Pt devices were fabricated using these click polymers as a solid-state electrolyte components. Among the devices, the catalyzed click polymer composed device exhibited a high power conversion efficiency of 4.62% under AM 1.5G illumination ($100mW/cm^2$).These click polymers are promising materials in device application and $Cu^I$-catalyst 1, 3-dipolar cycloaddition click reaction is an efficient synthetic methodology.

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