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http://dx.doi.org/10.4313/TEEM.2008.9.2.047

Study of Thermal Stability of Ni Silicide using Ni-V Alloy  

Zhong, Zhun (Department of Electrical Engineering, Chungnam National University)
Oh, Soon-Young (Department of Electrical Engineering, Chungnam National University)
Lee, Won-Jae (Department of Electrical Engineering, Chungnam National University)
Zhang, Ying-Ying (Department of Electrical Engineering, Chungnam National University)
Jung, Soon-Yen (Department of Electrical Engineering, Chungnam National University)
Li, Shi-Guang (Department of Electrical Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electrical Engineering, Chungnam National University)
Wang, Jin-Suk (Department of Electrical Engineering, Chungnam National University)
Lee, Hi-Deok (Department of Electrical Engineering, Chungnam National University)
Kim, Yeong-Cheol (Department of Materials Engineering, Korea University of Technology and Education)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.2, 2008 , pp. 47-51 More about this Journal
Abstract
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
Keywords
Ni-V(Nickel vanadium) alloy; Thermal stability; Ni silicide; RTP;
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