• Journal of Industrial Technology
• /
• v.23 no.A
• /
• pp.199-206
• /
• 2003

The charcoal-encapsulated methyl silica microcapsules were prepared by a O/W microemulsion sol-gel method, and the adsorption properties on aquatic humic acid were investigated. The capsules prepared were spherical, $100{\sim}1000{\mu}m$ in size. The size distribution was controllable by adjusting the size of charcoal powder, charcoal/methyl silica ratio, and agitating speed in O/W sol-gel process. Adsorption efficiency of charcoal for aquatic humic acid was decreased after encapsulation by methyl silica shell. The decreased adsorption efficiency can be dependent on the decrease of the BET surface area and pore volume after encapsulation. Diffusion properties of humic acid through the capsule shell also played an important role on adsorption efficiency. Therefore, the reasonable target pollutants for the capsules can be VOC or odor molecules which can overcome diffusion barrier through shell of capsules in air condition. Functionalization methods for the charcoal-encapsulated $CH_3(SiO)_n$ microcapsules by incorporation of $TiO_3$ as a phtocatalytic function and by incorporation of inorganic pigment as a color function were also investigated. $TiO_2$ coating properties were controllable by adjusting pH, temperature, and the concentration of $TiOSO_4$. In XRD measurement, the crystal form of the coated $TiO_2$ was anatase. For the colorization of the capsules, inorganic pigments were more efficient than organic dyes, and various color was introduced to the capsules using inorganic pigments.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.189-193
• /
• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.260-260
• /
• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.873-876
• /
• 2000

Characteristics of piezoelectric thick films prepared by screen printing method were investigated. The piezoelectric thick films were printed using Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$system. The lower electrodes were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited with Pt by sputtering on Ag-Pd. The ceramic paste was prepared by mixing powder and binder with various ratios using three roll miller. The fabricated thick films were burned out at 650$^{\circ}C$ and sintered at 950$^{\circ}C$ in the O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20 $\mu\textrm{m}$ and the Ag-Pd electrode acted as a diffusion barrier above 3 $\mu\textrm{m}$ thickness. When the lower electrode Ag-Pd was 6 $\mu\textrm{m}$ and the piezoelectric thick films were sintered by 2nd step (650$^{\circ}C$/20min and 950$^{\circ}C$/1h) using paste mixed Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$$.$ MnO$_2$+ Bi$_2$O$_3$. V$_2$O$\_$5/ and binder in the ratio of 70:30, the remnant polarization of thick film was 9.1 ${\mu}$C /cm$^2$.

• Transactions of the Society of Information Storage Systems
• /
• v.3 no.3
• /
• pp.123-125
• /
• 2007

We report the readout stability improvement results of super-resolution near field structure (Super-RENS) writeonce read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) By using diffusion barrier structure (GeSbTe sandwiched by GeN) and high transition temperature recording material ($BaTiO_3$), material diffusion of phase change layer and recording mark degradation were greatly improved during high power (Pr=2.0mW) readout process up to $1{\times}10^5$ times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.1
• /
• pp.44-47
• /
• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2002.11a
• /
• pp.72-74
• /
• 2002

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

• Electrical & Electronic Materials
• /
• v.9 no.4
• /
• pp.336-343
• /
• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.156-156
• /
• 2017

In this work, analysis of biocompatible TiO2 oxide multilayer by the XPS depth profiling was researched. the manufacture of the TiO2 barrier-type multilayer was accurately performed in a mixed electrolyte containing HAp, Pd, and Ag nanoparticles. The temperature of the solution was kept at approximatively $32^{\circ}C$ and was regularly rotated by a magnetic stirring rod in order to increase the ionic diffusion rate. The manufactured specimens were carefully analyzed by XPS depth profile to investigate the result of chemical bonding behaviors. From the analysis of chemical states of the TiO2 oxide multilayer using XPS, the peaks are showed with the typical signal of Ti oxide at 459.1 eV and 464.8 eV, due to Ti 2p(3/2) and Ti 2p(1/2), respectively. The Pd-3d peak was split into Pd-3d(5/2) and Pd-3d(3/2)peaks, and shows two bands at 334.7 and 339.9 eV for Pd-3d3 and Pd-3d5, respectively. Also, the peaks of Ag-3d have been investigated. The chemical states consisted of the O-1s, P-2p, and Ti-2p were identified in the forms of PO42- and PO43-. Based on the results of the chemical states, the chemical elements into the TiO2 oxide multilayer were also inferred to be penetrated from the electrolyte during anodic process.The structure characterization of the modified surface were performed by using FE-SEM, and from the result of biological evaluation in simulated body fluid(SBF), the biocompatibility of TiO2 oxide multilayer was effective for bioactive property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.454-459
• /
• 2020

In this study, a TiO₂/TiO_2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO₂/TiO_2-x-based ReRAM was evaluated by applying RF power to the TiO_2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.