• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.791-796
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• 1997

The influence of Ti/Sr ratio on abnormal grain growth of Nb-doped SrTiO3 was investigated. For specimens which were isothermally sintered at temperatures above 144$0^{\circ}C$, the nucleation and growth rates of abnormal grain growth were decreased with increasing Ti/Sr ratio. But the onset time of abnormal grain growth was increased with increasing Ti/Sr ratio. The cross-section of abnormally grown grains was mostly hexagonal. When the specimens were quenched in air after they reached their setting temperatures at a heating rate of 3$^{\circ}C$/min, the onset temperature of abnormal grain growth was increased with increasing Ti/Sr ratio and the final grain size was independent of Ti/Sr ratio. The cross-section of abnormally grown grains was mostly rectangular.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.609-612
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• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.317-321
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• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.50-50
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• 1996

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.795-797
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• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.341-348
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• 1984

$BaTiO_3$ and $SrTiO_3$ were mixed with the mole ratio of 35:65， 50:50 and 65:35 and heated at 1100~120$0^{\circ}C$ for 1~64 hours. The dielectrics of $BaTiO_3$-$SrTiO_3$ system were investigated as a function of amount of solid solution formed. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of heating of soaking time for the same composition and heating temperature. This can be explained by the homogeneous distribution of $Ba^{2+}$ and $Sr^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$ in the $BaTiO_3$-$SrTiO_3$system because of decreasing the lattice constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.45-48
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• 1998

A BaTiO$_3$ was annexed to SrTiO$_3$, (x)BaTiO$_3$-(1-x)SrTiO$_3$ (0.7$\leq$X$\leq$1) ceramics with stable dielectric and electrical properties in high voltage were manufactured. Structural, dielectric and electrical properties were surveyed with the contents of SrTiO$_3$. The open porosity and sintering density were excellent in 0.9BaTiO$_3$-0.1SrTiO$_3$, the grain size of 0.9BaTiO$_3$-0.1SrTiO$_3$ was maximum at 12.40[${\mu}{\textrm}{m}$]. Increasing SrTiO$_3$ mol ratio, the curie temperature was shifted low temperature and the supreme permittivity was increased. In line with increasing of supplied voltage, permitivity was decreased slightly.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.27-32
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• 1986

This study is aimed at synthsizing high dielectric material (Ba, Sr)$TiO_3$ through direct wet process. Pure and ultra fine particle of (Ba, Sr)$TiO_3$ Powder was synthesized from $BaCl_2$ $SrCl_2$ and TiCl4 aqeous solution at KOH Solution in the $N_2$ gas atmosphere. $BaCl_2$ $SrCl_2$ and TiCl4 were Mixed with the mole ratio of 1:9, 3:7:10, 5:5:10, 7:3:10, 9:1:10 and sythesized at 4$0^{\circ}C$~9$0^{\circ}C$ for 10min~15hrs. The particle size particle shape crystallinity and synthesis condition of (Ba, Sr)$TiO_3$ powder with the variation of temperature and reaction time in the aqueous solution studied by the exprimental instruments of DTA. TGA, X-ray diffratometer SEM.