• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.392-395
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• 2003

For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $354/{\S}^2$, respectively. But the proposed EST exhibits snap-back with the anode voltage and current density 0.93V and $58A/{\S}^2$, respectively. Saturation current density of the proposed EST at anode voltage 6.11V is $3797A/{\S}^2$. The characteristics of 700V forward blocking of the proposed EST obtained from two dimensional numerical simulations (MEDICI) is described and compared with that of the conventional EST.

• Journal of Power Electronics
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• 제17권6호
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• pp.1683-1693
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• 2017

This paper analyses the harmonic pollution to power grids caused by thyristor-controlled devices. It also formulates a mathematic derivation for the voltage spikes in thyristor-controlled branches to explain the harmonic and EMI derived from the reverse-recovery characteristics of the thyristor. With an equivalent nonlinear time-varying voltage source, a detailed simulation model is established, and the periodic dynamic switching characteristic of the thyristor can be explicitly implied. The simulation results are consistent with the probed results from on-site measurements. An improved trigger system with gate-shorted circuit structure is proposed to reduce the voltage spikes that cause EMI. The experimental results indicate that a prototype with the improved trigger system can effectively suppress the voltage spikes.

• 수산해양기술연구
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• 제31권2호
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• pp.190-198
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• 1995

전원을 단락시킴이 없는 SCR이중 브리지 트리거 방식을 고안하여, 정역전이 가능한 SCR 서보증폭기로 구성하여 본 결과 다음과 같은 결론을 내릴 수 있었다. I. 출력전압의 부호를 변경시킬 때 현재의 전언부호가 반전될 때까지 도통 상태를 유지시키다가, 전원부호가 반전된 이후 적절한 SCR을 도통 시킴으로서 크리거 실패가 없게 되어, 전원을 단락시키지 않게 되고 SCR의 소손을 막을 수 있었다. II. -에서 약 30Hz 부근까지는 60Hz의 전원으로서 원하는 출력을 표현할 수 있었는데, 이는 대형 직류 전동기의 동특성을 충분히 확보할 수 있는 값이다. III. 유도성 부하의 경우라도 이미 도통된 SCR을 통하여 유동성부하L에 저장될 수 있는 에너지의 총량은 전원의 반주기 시간과 전원이 파고치값 한계내이므로, 다음 반주기동안 부호만 반전된 전원 전압과 동일한 반주기의 시간이 존재하므로, 에너지 보존의 법칙에 의해 반드시 다음 반주기 안에 현재도통된 SCR은 소호되게 되므로 트리거실패는 존재하지 않는다.

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.10-10
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• 1996

• 전력전자학회논문지
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• 제19권5호
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• pp.475-480
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• 2014

This study proposes a new synthetic test circuit (STC) for HVDC thyristor valve tests. The conventional STC with a 2-phase chopper requires a 3-phase transformer, a 3-phase diode rectifier, and an IGBT to facilitate the off state of an auxiliary thyristor. In the proposed STC, these three components are replaced with one diode and one resistor, which result in the simplified implementation of the hardware of the STC. Simulation and experimental results demonstrate the validity of the proposed scheme.

• 전력전자학회논문지
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• 제17권3호
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• pp.191-197
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• 2012

This paper proposes a new synthetic test circuit (STC) to confirm the switching operation of thyristor valve in HVDC converter. The proposed STC uses a 6-pulse thyristor converter with 2-phase chopper as a high-current source to provide turn-on current to the test valve. The operation of proposed STC was verified through theoretical analysis and computer simulations. Based on computer simulations, a hardware scaled model was built and tested to confirm the feasibility of implementing a real-size test facility. The proposed system has an advantage of simple structure and operation over the existing system.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 전기학회논문지
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• 제65권3호
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• pp.511-519
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• 2016

This paper is proposed control algorithm for the using thyristor of the parallel dual converter for Urban railway power supply in order to return the regenerative power generated by regenerative braking in urban railway train. Conventional control algorithm of Thyristor dual converter for urban railway power supply has voltage variation within a control range of hysteresis band. The purposed control algorithm of the parallel thyristor dual converter is to maintain a constant voltage without voltage variation in accordance with variable load through the Sequential mode change. And the control algorithm need calculating optimum initial firing angle to consider magnitude of the load current slope. For this purpose, Proposed algorithm for sequential conversion mode of the dual converter was verified by applying for the simulation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.34-39
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• 2006

In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.