• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• The KIPS Transactions:PartA
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• v.17A no.6
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• pp.265-274
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• 2010

As the process technology scales down and integration densities continue to increase, interconnection has become one of the most important factors in performance of recent multi-core processors. Recently, to reduce the delay due to interconnection, 3D architecture has been adopted in designing multi-core processors. In 3D multi-core processors, multiple cores are stacked vertically and each core on different layers are connected by direct vertical TSVs(through-silicon vias). Compared to 2D multi-core architecture, 3D multi-core architecture reduces wire length significantly, leading to decreased interconnection delay and lower power consumption. Despite the benefits mentioned above, 3D design technique cannot be practical without proper solutions for hotspots due to high temperature. In this paper, we propose three floorplan schemes for reducing the peak temperature in 3D multi-core processors. According to our simulation results, the proposed floorplan schemes are expected to mitigate the thermal problems of 3D multi-core processors efficiently, resulting in improved reliability. Moreover, processor performance improves by reducing the performance degradation due to DTM techniques. Power consumption also can be reduced by decreased temperature and reduced execution time.

• Journal of Environmental Science International
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• v.21 no.8
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• pp.891-899
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• 2012

The chlorination pattern of naphthalene vapor when passed through a 1 cm particle bed of 0.5% (mass) copper (II) chloride ($CuCl_2$) mixed with silicon dioxide ($SiO_2$) was studied. Gas streams consisting of 92% (molar) $N_2$, 8% $O_2$ and 0.1% naphthalene vapor were introduced to an isothermal flow reactor containing the $CuCl_2/SiO_2$ particle bed. Chlorination of naphthalene was studied from 100 to $400^{\circ}C$ at a gas velocity of 2.7 cm/s. Mono through hexachlorinated naphthalene congeners were observed at $250^{\circ}C$ whereas a broader distribution of polychlorinated naphthalenes (PCNs) including hepta and octachlorinated naphthalenes was observed at $300^{\circ}C$. PCN production was peak at $250^{\circ}C$ with 3.07% (molar) yield, and monochloronaphthalene (MCN) congeners were the major products at two different temperatures. In order to assess the effect of a residence time on naphthalene chlorination, an experiment was also conducted at $300^{\circ}C$ with a gas velocity of 0.32 cm/s. The degree of naphthalene chlorination increased as a gas velocity decreased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Applied Chemistry for Engineering
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• v.35 no.4
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• pp.309-315
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• 2024

Silicon and carbon composite (SiC) is considered one of the most promising anode materials for the commercialization of Si-based anodes, as it could simultaneously satisfy the high theoretical capacity of Si and the high electronic conductivity of carbon. However, SiC active material undergoes repeated volumetric changes during charge/discharge processes, leading to continuous electrolyte decomposition and capacity fading, which is still considered an issue that needs to be addressed. To solve this issue, we suggest a 4,4'-Methylenebis(cyclohexyl isocyanate) (H₁₂MDI)-based waterborne polyurethane binder (HPUD), which forms a 3D network structure through thermal cross-linking reaction. The cross-linked HPUD (denoted as CHPU) was prepared using an epoxy ring-opening reaction of the cross-linker, triglycidyl isocyanurate (TGIC), via simple thermal treatment during the SiC anode drying process. The SiC anode with the CHPU binder, which exhibited superior mechanical and adhesion properties, not only demonstrated excellent rate and cycling performance but also alleviated the volume expansion of the SiC anode. This work implies that eco-friendly binders with cross-linked structures could be utilized for various Si-based anodes.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.4
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• pp.267-272
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• 2005

We deposited thin films of organic light-emitting-material $Alq_3$(alumina quinoline) on silicon and slide-glass substrates using thermal evaporation method, and measured spectra of ellipsometry angles ${\Delta}$ and ${\Psi}$ in the photon-energy range of 1.5~5.0 eV using a variable angle spectroscopic ellipsometer. The optical constants, refractive index and extinction coefficient, of $Alq_3$ were determined via the dispersion parameters extracted from the curve-fitting process based on Jellison-Modine dispersion function. The reliability of determined optical constants were verified through the comparison of measured and simulated transmittance curves and the good agreement between simulated absorption-coefficient curves and absorbance spectra measured using a spectrophotometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1515-1516
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjection a 40:60(vol%) mixture of zirconium diborided ($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS) under argon atmosphere. Inner diameters of graphite mold were $15mm{\varphi}$ and $20mm{\varphi}$, respectively. The relative densities of $15mm{\varphi}$ and $20mm{\varphi}$ sample were 99.4% and 97.88%, respectively. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The result of FE-SEM of fracture face of $15mm{\varphi}$ sample was intergranular fracture and that of $20mm{\varphi}$ sample was transgranular fracture. Because the fracture strength of $15mm{\varphi}$ sample was much higher than that of $20mm{\varphi}$ sample. The electrical resistivity, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$ of $15mm{\varphi}$ sample was higher than that, $6.17{\times}10^{-4}{\Omega}{\cdot}cm$ of $20mm{\varphi}$ sample because of densification. Although sintering condition of SPS is same. the properties of sintered SiC-$ZrB_2$ compacts were changed according to inner diameter of graphite mold.