• 대기
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• 제19권4호
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• pp.309-318
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• 2009

Vulnerability to heat was examined for populations of 6 major cities in South Korea (Seoul, Incheon, Daejeon, Gwangju, Daegu, and Busan). Daily excess mortality and maximum temperature from 1991 to 2005 were employed in this study. The results show that the standardized mortality increase associated with a $1^{\circ}C$ increase in daily maximum temperature above the city-specific threshold explains the heat acclimatization effect better than the threshold temperature itself. The estimated increase in mortality (standardized per 10 million population) associated with a $1^{\circ}C$ increase in temperature above the threshold is 4.8 in Incheon, 4.7 in Seoul, 4.3 in Daejeon, 2.8 in Gwangju, 2.4 in Daegu, and 1.5 in Busan, well reflecting the latitudinal locations and local climates of each city. Climate models project more frequent, more intense, and longer lasting heat waves in most land areas in both hemispheres in the 21st century under increasing greenhouse gas concentrations. In order to mitigate the adverse human health impacts due to excess heat, more detailed characteristics of acclimatization to heat need to be understood and quantified.

• Nuclear Engineering and Technology
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• 제49권4호
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• pp.663-667
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• 2017

Delayed hydride cracking (DHC) was first observed in pressure tubes in Canadian CANDU reactors. In light water reactors, DHC was not observed until the late 1990s in high-burnup boiling water reactor (BWR) fuel cladding. In recent years, the focus on DHC has resurfaced in light of the increased interest in the cladding integrity during interim conditions. In principle, all spent fuel in the wet pools has sufficient hydrogen content for DHC to operate below $300^{\circ}C$. It is therefore of importance to establish the critical parameters for DHC to operate. This work studies the threshold stress intensity factor ($K_{IH}$) to initiate DHC as a function of temperature in Zry-4 for temperatures between $227^{\circ}C$ and $315^{\circ}C$. The experimental technique used in this study was the pin-loading testing technique. To determine the $K_{IH}$, an unloading method was used where the load was successively reduced in a stepwise manner until no cracking was observed during 24 hours. The results showed that there was moderate temperature behavior at lower temperatures. Around $300^{\circ}C$, there was a sharp increase in $K_{IH}$ indicating the upper temperature limit for DHC. The value for $K_{IH}$ at $227^{\circ}C$ was determined to be $2.6{\pm}0.3MPa$ ${\surd}$m.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.93-96
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• 1990

The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1172-1175
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• 2007

We have investigated the threshold voltage shifts(${\Delta}Vth$) and drain current level shift (${\Delta}Ids$) in subthreshold region of a-Si:H TFTs induced by DC Bias (Vgs and Vds) - Temperature stress (BTS) condition. We plotted the transfer curves and the ${\Delta}Vth$ contour maps as Vds-Vds stress bias and Temperature to examine the severe damage cases on TFTs. Also, by drawing out the time-dependent transfer curve (Ids-Vgs) in the region of $10^{-8}\;{\sim}\;10^{-13}$ (A) current level, we can estimate the failure time of TFTs in a operating condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• ETRI Journal
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• 제28권5호
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.199-201
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• 1994

The switching characteristics of $As_{10}Ge_{15}Te_{75}$ thin film were investigated under dc bias. It was found that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.