• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.10a
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• pp.106-111
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• 2003

This study made an experiment On fatigue crack propagation da/dn, stress intensity factor range ${\Delta}K$ respectively in room temperature and in low temperature. And we got the following characteristics from fatigue crack growth test carried Out in the environment of room temperature and law temperature at $25^{\circ}C$, $-60^{\circ}C$, $-80^{\circ}C$, and $-100^{\circ}C$ in the range of stress ratio of 0.3 by means of opening made displacement. The threshold stress intensity factor range ${\Delta}Kth$ in the early stage of fatigue crack growth (Mode I) and stress intensity factor range ${\Delta}K$ in the stable of fatigue crack growth (Made II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at law temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.8-8
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• 2009

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ ratio from 1.2 to 1.8%. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

• Elastomers and Composites
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• v.52 no.4
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• pp.272-279
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• 2017

The heterocoagulation of latex is a simple and useful method to fabricate various polymer nanocomposites in which a precise control of the colloid stability is essential. In this work, a multi-layered graphenes (MLGs)/poly(styrene-co-butyl acrylate) (P(S-co-BA)) nanocomposite having an excellent dispersion of MLGs was prepared via the sudden heating heterocoagulation process. The P(S-co-BA) component was obtained by emulsion polymerization. This process can effectively shorten the process and particles growth steps. The colloid stability of these dispersions was controlled by factors such as ionic charge, temperature, and reaction times. The influence of these factors on heterocoagulation was evaluated and the properties of the nanocomposites were investigated. The conductivity of the MLGs/P(S-co-BA) nanocomposites increased from -11.53 to -5.70 S/cm for an increase in MLG content from 0.01 to 5 wt%. Moreover, percolation threshold was observed in the case of 0.01 wt% MLGs.

• Journal of the Korean Society for Railway
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• v.10 no.2 s.39
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• pp.211-216
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• 2007

Rubber components are widely used in many application such as vibration isolators, damping, ride quality. Rubber spring is used in primary suspension system for railway vehicle. Characteristics and useful life prediction of rubber spring was very important in design procedure to assure the safety and reliability. Non-linear properties of rubber material which are described as strain energy function are important parameter to design and evaluate of rubber spring. These are determined by physical tests which are uniaxial tension, equi-biaxial tension and pure shear test. The computer simulation was executed to predict and evaluate the load capacity and stiffness for rubber spring. In order to investigate the useful life, the acceleration test were carried out. Acceleration test results changes as the threshold are used for assessment of the useful life and time to threshold value were plotted against reciprocal of absolute temperature to give the Arrhenius plot. By using the acceleration test, several useful life prediction for rubber spring were proposed.

• Journal of Welding and Joining
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• v.8 no.2
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• pp.70-79
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• 1990

Stainless clad steels were made through hot rolling process. Backing plates employed in this study were HSLA steel and mild steel. The shear bond strength increased with an increase of the soaking temperature and time. It was also found that the shear bond strength increased with an increase of the reduction ratio. The threshold deformation was observed to be 20% and 10% respectively when the soaking conditions of 15 min. at 900.deg. C and 30 min. at 1000.deg. C were applied. Either the rolling or the transverse direction did not give any significant difference in the shear bond strength. Stainless steel-HSLA steel was superior to stainless steel-mild steel in the same range of magnitude. Because the above experimental results were in contrary to the existing mechanisms, the new model was proposed to describe the bonding mechanism and the void formation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.595-599
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• 2003

We have studied the phase transition to look for molecular structure by using several different techniques for new banana-shaped liquid crystals shown in Fig. 1. Based on the similarities to recently observed fluro-contaning materials (switching involves layer structure rearrangement, increasing threshold with increasing temperature) for HC sample (where x is H), we assume that the phase C has a triclinic symmetry corresponding to the double tilted $smC_G$ Phase. The observation that the polarization peak appears at lower field ($E_o{\sim}15V/{\mu}m$) than the amplitude of the threshold ($E_{th}$) can be explained assuming a field induced $SmC_G$ - SmCP (or SmAP) transition at $E_{th}$

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.547-555
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• 1996

Porous alumina ceramics were fabricated by pseudo-boehmite phydosol-gel process within/without commercial $\alpha$-alumina particles average 1 and 40 micron respectively. The pore characteristics of fired specimens were studied by the measurement of bulk density total porosity thyermal analysis pore volume pore distribution BET area XRD and SEM. with increasing of firing temperature pore volume and BET surface area were decreased and the average pore size was increased to approximately 146$\AA$ upto 80$0^{\circ}C$ by de-watering of [OH] and formation of $\alpha$-alumina. The fired relative density of the alumina-dispersed specimen with average 1 micron particle was increased with the amounts of dispersed particle by bimodal packing theory which is compared to the ones of specimen including of average 40 micron particle. It was confirmed that the percola-tion threshold in porous ceramics with coarser particle (40 micron) has formed between the transformed-alumina from hydrogel and dispersed-alumina of above 50 vol% particle and the total porosity was increased at the threshold point above.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.331-338
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• 2014

A charge-pump circuit using a current-bypass technique, which suppresses charge sharing and reduces the sub-threshold currents, helps to decrease phase-locked loop (PLL) jitter without resorting to a feedback amplifier. The PLL shows no stability issues and no power-up problems, which may occur when a feedback amplifier is used. The PLL is implemented in 0.11-${\mu}m$ CMOS technology to achieve 0.856-ps RMS and 8.75-ps peak-to-peak jitter, which is almost independent of ambient temperature while consuming 4 mW from a 1.2-V supply.