• Computers and Concrete
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• v.22 no.6
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• pp.551-561
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• 2018

The percolation of interfacial transition zone (ITZ) in cementitious materials is of great importance to the transport properties and durability issues. This paper presents numerical simulation research on the ITZ percolation threshold of mortar specimens at meso-scale. To simulate the meso-scale model of mortar as realistically as possible, the aggregates are simplified as ellipsoids with arbitrary orientations. Major and minor aspect ratios are defined to represent the global shape characteristics of aggregates. Some algorithms such as the burning algorithm, Dijkstra's algorithm and Connected-Component Labeling (CCL) algorithm are adopted for identification of connected ITZ clusters and percolation detection. The effects of gradation and aspect ratios of aggregates on ITZ percolation threshold are quantitatively studied. The results show that (1) the ITZ percolation threshold is mainly affected by the specific surface area (SSA) of aggregates and shows a global decreasing tendency with an increasing SSA; (2) elongated ellipsoidal particles can effectively bridge isolated ITZ clusters and thus lower the ITZ percolation threshold; (3) as ITZ volume fraction increases, the bridging effect of elongated particles will be less significant, and has only a minor effect on ITZ percolation threshold; (4) it is the ITZ connectivity that is essentially responsible for ITZ percolation threshold, while other factors such as SSA and ITZ volume fraction are only the superficial reasons.

• Journal of IKEEE
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• v.24 no.1
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• pp.194-199
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• 2020

The threshold voltage roll-off for an asymmetric junctionless double gate MOSFET is analyzed according to the top and bottom gate oxide thicknesses. In the asymmetric structure, the top and bottom gate oxide thicknesses can be made differently, so that the top and bottom oxide thicknesses can be adjusted to reduce the leakage current that may occur in the top gate while keeping the threshold voltage roll-off constant. An analytical threshold voltage model is presented, and this model is in good agreement with the 2D simulation value. As a result, if the thickness of the bottom gate oxide film is decreased while maintaining a constant threshold voltage roll-off, the top gate oxide film thickness can be increased, and the leakage current that may occur in the top gate can be reduced. Especially, it is observed that the increase of the bottom gate oxide thickness does not affect the threshold voltage roll-off.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.58-62
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• 1985

Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

• Journal of Korean Society of Water and Wastewater
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• v.16 no.6
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• pp.710-716
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• 2002

A General Pipe Break Prediction Model that incorporates linear and exponential models in its form is developed. The model is capable of fitting pipe break trends that have linear, exponential or in between of linear and exponential trend by using a weighting factor. The weighting factor is adjusted to obtain a best model that minimizes the sum of squared errors of the model. The model essentially plots a best curve (or a line) passing through "cumulative number of pipe breaks" versus "break times since installation of a pipe" data points. Therefore, it prevents over-predicting future number of pipe breaks compared to the conventional exponential model. The optimal replacement time equation is derived by using the Threshold Break Rate equation by Loganathan et al. (2002).

• Communications for Statistical Applications and Methods
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• v.8 no.1
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• pp.109-115
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• 2001

Wavelet coefficients are known to have decorrelating properties, since wavelet is orthonormal transformation. but empirically, those wavelet coefficients of images, like edges, are not statistically independent. Jansen and Bultheel(1999) developed the empirical Bayes approach to improve the classical threshold algorithm using local characterization in Markov random field. They consider the clustering of significant wavelet coefficients with uniform distribution. In this paper, we developed wavelet thresholding algorithm using Laplacian distribution which is more realistic model.

• Journal of Korean Institute of Industrial Engineers
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• v.17 no.2
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• pp.107-113
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• 1991

This article develops a control model for an open queueing network in terms of both the input and the output processes with stochastic intensities. The input and the output intensities are subject to some capacity limits and optimum control is characterized by a threshold type with a finite upper barrier. A discounted profit is used as a decision criteria, which is revenue minus operating and holding cost.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.733-737
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• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Journal of Satellite, Information and Communications
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• v.8 no.1
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• pp.61-65
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• 2013

In this paper, we propose system model to solve conventional threshold problem of using fixed false alarm for energy spectrum sensing. Spectrum sensing reliability is ensured when Secondary user have high SNR. Thus, it is not reasonable using fixed optional false alarm without considering CR user's SNR. So, we propose adaptive threshold method. adaptive threshold is decided by controling FA according to CR user's SNR.

• Journal of KIISE:Software and Applications
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• v.36 no.1
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• pp.82-91
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• 2009

Sign language spotting is the task of detecting and recognizing the signs in a signed utterance. The difficulty of sign language spotting is that the occurrences of signs vary in both motion and shape. Moreover, the signs appear within a continuous gesture stream, interspersed with transitional movements between signs in a vocabulary and non-sign patterns(which include out-of-vocabulary signs, epentheses, and other movements that do not correspond to signs). In this paper, a novel method for designing a threshold model in a conditional random field(CRF) model is proposed. The proposed model performs an adaptive threshold for distinguishing between signs in the vocabulary and non-sign patterns. A hand appearance-based sign verification method, a short-sign detector, and a subsign reasoning method are included to further improve sign language spotting accuracy. Experimental results show that the proposed method can detect signs from continuous data with an 88% spotting rate and can recognize signs from isolated data with a 94% recognition rate, versus 74% and 90% respectively for CRFs without a threshold model, short-sign detector, subsign reasoning, and hand appearance-based sign verification.