• Title/Summary/Keyword: Threshold model

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Standard Criterion of VUS for ROC Surface (ROC 곡면에서 VUS의 판단기준)

  • Hong, C.S.;Jung, E.S.;Jung, D.G.
    • The Korean Journal of Applied Statistics
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    • v.26 no.6
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    • pp.977-985
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    • 2013
  • Many situations are classified into more than two categories in real world. In this work, we consider ROC surface and VUS, which are graphical representation methods for classification models with three categories. The standard criteria of AUC for the probability of default based on Basel II is extended to the VUS for ROC surface; therefore, the standardized criteria of VUS for the classification model is proposed. The ranges of AUC, K-S and mean difference statistics corresponding to VUS values for each class of the standard criteria are obtained. The standard criteria of VUS for ROC surface can be established by exploring the relationships of these statistics.

Numerical and experimental assessments of focused microwave thermotherapy system at 925 MHz

  • Kim, Jang-Yeol;Lee, Kwang-Jae;Kim, Bo-Ra;Jeon, Soon-Ik;Son, Seong-Ho
    • ETRI Journal
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    • v.41 no.6
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    • pp.850-862
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    • 2019
  • This work investigated three-dimensional (3D) focused microwave thermotherapy (FMT) at 925 MHz for a human tissue mimicking phantom using the time reversal (TR) principle for musculoskeletal disorders. We verified the proposed TR algorithm by evaluating the possibility of 3D beam focusing through simulations and experiments. The simulation, along with the electromagnetic and thermal analyses of the human tissue mimicking phantom model, was conducted by employing the Sim4Life commercial tool. Experimental validation was conducted on the developed FMT system using a fabricated human tissue mimicking phantom. A truncated threshold method was proposed to reduce the unwanted hot spots in a normal tissue region, wherein a beam was appropriately focused on a target position. The validation results of the simulation and experiments obtained by utilizing the proposed TR algorithm were shown to be acceptable. Effective beam focusing at the desired position of the phantom could be achieved.

A Congestion Control Mechanism for Supporting Differentiated Service in Mobile Ad hoc Networks

  • Kim Jin-Nyun;Ha Nam-Koo;Cho Dong-Hoon;Kim Hyun-Sook;Han Ki-Jun
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.143-146
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    • 2004
  • Differentiated services (DiffServ) has been widely accepted as the service model to adopt for providing quality-of­service (QoS) over the next-generation IP networks. There is a growing need to support QoS in mobile ad hoc networks. Supporting DiffServ in mobile ad hoc networks, however, is very difficult because of the dynamic nature of mobile ad hoc networks, which causes network congestion. The network congestion induces long transfer packet delay and low throughput which make it very difficult to support QoS in mobile ad hoc networks. We propose DiffServ module to support differentiated service in mobile ad hoc networks through congestion control. Our DiffServ module uses the periodical rate control for real time traffic and also uses the best effort bandwidth concession when network congestion occurs. Network congestion is detected by measuring the packet transfer delay or bandwidth threshold of real time traffic. We evaluate our mechanism via a simulation study. Simulation results show our mechanism may offer a low and stable delay and a stable throughput for real time traffic in mobile ad hoc networks.

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Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

  • Jang, Moon-Gyu;Kim, Yark-Yeon;Shin, Jae-Heon;Lee, Seong-Jae;Park, Kyoung-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.94-99
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    • 2004
  • silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

Analysis of the quality of dental prostheses printed by digital light-processing technology (디지털 광공정 방식에 의해 출력된 치과용 보철물의 품질 분석)

  • Kim, Jae-Hong;Kim, Ki-Baek
    • Journal of Technologic Dentistry
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    • v.42 no.3
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    • pp.197-201
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    • 2020
  • Purpose: This study aimed to assess the quality of dental prostheses printed by digital light-processing (DLP) technology. Methods: Ten experimental models were prepared. The ten specimens that were printed by DLP technology constituted the DLP group. The ten specimens that were produced in the same model by the casting method constituted the control group. The marginal gaps of the 20 specimens produced were measured. These gaps were measured by a silicon replica technique at two abutments of the specimen. Therefore, 20 marginal gaps were measured in each group. An independent sample t-test was performed to compare the marginal gaps measured in the two groups (α=0.05). Results: According to the results of the measurement, there was a significant difference between the mean marginal gap of the control group (78.8 ㎛) and that of the DLP group (91.5 ㎛), p<0.001. Conclusion: Although the mean marginal gaps of dental fixed prostheses produced by the DLP method was higher than the mean marginal gap of those produced by the casting method, it was considered to be within the clinical threshold value suggested by some previous studies.

Study of screw loosening in cementation type implant abutment

  • Hwang, Bo-Yeon;Kim, Yung-Soo;Kim, Chang-Whe
    • The Journal of Korean Academy of Prosthodontics
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    • v.38 no.6
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    • pp.765-781
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    • 2000
  • The purpose of this study was to compare the screw loosening characteristics of three avail-able cementation type abutments: one-piece cementation type abutment; two-piece cementation type abutment using titanium abutment screw; two-piece cementation type abutment using gold abutment screw. Two implant supported three-unit superstructures were fabricated using a pair of 3 kinds of abutments for each experimental model. Cyclic loading was applied on the specimen, and made to stop when the superstructure showed movement over threshold range. The loaded cycle was counted until the machine stopped. Frequency analysis was done to measure the change of natural frequency before and after the application of cyclic load and to find the effect of screw loosening on the change of natural frequency. The specimen assembly was modeled to perform the finite element analysis to see the distribution of the stress induced by the application of preload over the screw joint and to compare the pattern of the distribution of stress induced by the external force with the change of the preload condition. The following results were obtained: 1. The failure loading cycle of two-piece cementation type abutment using gold screw was significantly greater than those of the other groups. 2. One-piece cementation type abutment applied to multi-unit restoration case did not show greater resistance to screw loosening compared to two-piece cementation type abutments. 3. Frequency analysis showed decrease in natural frequency when screw loosening occured.

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Modeling and Simulation on Ion Implanted and Annealed Indium Distribution in Silicon Using Low Energy Bombardment (낮은 에너지로 실리콘에 이온 주입된 분포와 열처리된 인듐의 거동에 관한 시뮬레이션과 모델링)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.750-758
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    • 2016
  • For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

A Study on Mouth Features Detection in Face using HMM (HMM을 이용한 얼굴에서 입 특징점 검출에 관한 연구)

  • Kim, Hea-Chel;Jung, Chan-Ju;Kwag, Jong-Se;Kim, Mun-Hwan;Bae, Chul-Soo;Ra, Snag-Dong
    • Proceedings of the Korea Information Processing Society Conference
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    • 2002.04a
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    • pp.647-650
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    • 2002
  • The human faces do not have distinct features unlike other general objects. In general the features of eyes, nose and mouth which are first recognized when human being see the face are defined. These features have different characteristics depending on different human face. In this paper, We propose a face recognition algorithm using the hidden Markov model(HMM). In the preprocessing stage, we find edges of a face using the locally adaptive threshold scheme and extract features based on generic knowledge of a face, then construct a database with extracted features. In training stage, we generate HMM parameters for each person by using the forward-backward algorithm. In the recognition stage, we apply probability values calculated by the HMM to input data. Then the input face is recognized by the euclidean distance of face feature vector and the cross-correlation between the input image and the database image. Computer simulation shows that the proposed HMM algorithm gives higher recognition rate compared with conventional face recognition algorithms.

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Estimation of Deepwater Design Wave Height on Southern Coast of Korean Peninsula by Empirical Simulation Technique (경험모의기법에 의한 남해안의 심해 설계파고 산정)

  • Suh, Kyung-Duck;Kim, Mun-Ki;Chun, Je-Ho
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.23 no.4
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    • pp.265-275
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    • 2011
  • Estimation of wave height is the most important factor in the design of coastal structures such as breakwaters. In the present study, typhoon wind distribution was constructed by applying the parametric model of Holland (1980), and numerical simulations on the typhoon-generated waves were carried out using the WAM. The typhoons which affected the southern coast of the Korean Peninsula and several hypothetical typhoons were selected to construct the training sets. Design wave heights were estimated using the empirical simulation technique for various return periods and wave directions. The estimated design wave heights were compared with those by the peaks-over-threshold method and the results of KORDI(2005).

A Study on a neural-Net Based Call admission Control Using Fuzzy Pattern Estimator for ATM Networks (ATM망에서 퍼지 패턴 추정기를 이용한 신경망 호 수락제어에 관한 연구)

  • 이진이;이종찬;이종석
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1998.10a
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    • pp.173-179
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    • 1998
  • This paper proposes a new call admission control scheme utilizing an inverse fuzzy vector quantizer(IFVQ) and neural net, which combines benefits of IFVQ and flexibilities of FCM(Fuzzy-C-Menas) arithmatics, to decide whether a requested call that is not trained in learning phase to be connected or not. The system generates the estimated traffic pattern of the cell stream of a new call, using feasible/infeasible patterns in codebook, fuzzy membership values that represent the degree to which each pattern of codebook matches input pattern, and FCM arithmatics. The input to the NN is the vector consisted of traffic parameters which is the means and variances of the number of cells arriving inthe interval. After training(using error back propagation algorithm), when the NN is used for decision making, the decision as to whether to accept or reject a new call depends on whether the output is greater or less then decision threshold(+0.5). This method is a new technique for call admi sion control using the membership values as traffic parameter which declared to CAC at the call set up stage, and is valid for a very general traffic model in which the calls of a stream can belong to an unlimited number of traffic classes. Through the simmulation. it is founded the performance of the suggested method outforms compared to the conventional NN method.

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