• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.753-758
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• 2005

A flux-lock type superconducting fault current limiter(SFCL) consists of two coils, which are wound in parallel each other through an iron core, and a high-$T_c$ Superconducting(HTSC) thin film connected in series with coil 2. If the current of the HTSC thin film exceeds its critical current by the fault accident, the resistance of the HTSC thin film generated, and thereby the fault current can be limited by the impedance of the fluk-lock type SFCL. In this paper, we investigated the dependence of both the fault current limiting characteristics and the current distribution between two coils on the operational current of the flux-lock type SFCL through the equivalent circuit analyses and short circuit tests. From the comparison of both the results, the experimental results well agreed with the analyses for equivalent circuit.

• 한국수소및신에너지학회논문집
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• 제24권3호
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• pp.193-199
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• 2013

In this work, thin film type Cu/ZnO nanostructure catalysts were fabricated by several synthetic routes in order to maximize the performance of the micro reforming system. For this work, various Cu/ZnO nanostructure catalysts could be synthesized by means of four approaches which are chemical vapor method, wet solution method and their hybrid method. The reforming performance of these as-synthetic catalysts was evaluated as compared to the conventional catalysts. Among the as-synthetic nanostructures, sphere type catalysts with specific surface of $18.6m^2/g$ showed the best performance of hydrogen production rate of 30ml/min at the feed rate of 0.2ml/min. This work will give the first insight on thin film type Cu/ZnO nanostructure catalyst for micro reforming system for hydrogen production of portable electronic systems.

• 센서학회지
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• 제16권4호
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.21-24
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• 2000

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1022-1028
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• 1997

In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.38-38
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• 2013

The mechanical cues that adherent cells derive from the extracellular matrix (ECM) can effect dramatic changes in cell migration, proliferation, and differentiation. Using a thin film of Type I collagen fibrils comprised of 100 nm to 200 nm collagen fibrils overlaying a bed of smaller fibrils, changes in cellular response to systematically controlled changes in mechanical properties of collagen was investigated. Further, an experimental and modeling approaches to calculate the elastic modulus of individual collagen fibrils, and thereby the effective stiffness of the entire collagen thin film matrix, from atomic force microscopy force spectroscopy data was performed. These results demonstrate an approach to analysis of fundamental properties of thin, heterogeneous, organic films, and add further insights into the mechanical properties of collagen fibrils that are of relevance to cell response to the ECM.

• 반도체디스플레이기술학회지
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• 제11권3호
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.