Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of Thermoelectric Power in PbS Thin Films by Chemical Bath Deposition

화학 반응에 의한 PbS 박막의 열기전력 특성

  • 조종래 (부산대학교 공과대학 전자공학과) ;
  • 조정호 (부산대학교 공과대학 전자공학과) ;
  • 김강언 (부산대학교 공과대학 전자공학과) ;
  • 정수태 (부산대학교 공과대학 전자공학과)
  • Published : 2000.05.13
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Abstract

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

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