• Korean Journal of Plant Taxonomy
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• v.37 no.3
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• pp.275-308
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• 2007

For 20 taxa of Korean Allium, including 16 species and 5 varieties, examined were morphological characters (i.e. sexuality, structure and shape of underground part, types and growing patterns of leaf and scape, and shapes of perianth, filament and pistil). The specialization and the evolutionary trends of taxonomic characters were inferred from morphological examination. Taxonomic relationships and system of Korean Allium were also studied. The characters showing evolutionary trends were the structure and shape of underground part including rhizome and bulb, leaf, scape, inflorescens, filament and ovary. It seemed that thin and short rhizome developed from thick and long one, and the membranous simple bulb tunic evolved into fibrous reticulate one. The presence of hyaline sheath in A. monanthum of sect. Microscordum was apomorphic. Both angular leaf blade with 2-rowed vascular bundle and flat blade with 1-rowed vascular bundle were developed from terete one with 2-rowed vascular bundle. The base of filament have differentiated from entire to toothed, and 2-ovuled ovary as well as erect scape before flowering was plesiomorphic type. In addition, sexuality, structure of underground part, the presence of hyaline sheath and cross-section structure of leaf were taxonomic characters with the level of the subgenus in this genus. Shape of rhizome, bulb, leaf, scape and pedicel discriminated each section from other ones in the subgenera easily. The shape and arrangement of perianth and filaments were the diagnostic characters for species level along with shape of ovary and stigma.

• The korean journal of orthodontics
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• v.31 no.1 s.84
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• pp.97-105
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• 2001

In many cases of orthodontic treatment the upper anterior teeth are retracted. Periodontal problems may arise during incisor retraction, if the amount of tooth movement and the amount of remodeling in the anterior cortical bone are not the same. Therefore in this study, to find out the relationship between the amount of tooth movement and the amount of bone remodeling during retraction of the upper anterior teeth, lateral cephalograms of 56 female patients over 18-year-old were taken before and after treatment. Among the 56 patients, two groups were divided according to the type of root movement during retraction. 26 patients mainly moved by tipping and 30 by bodily movement. The cephalograms taken before and after treatment were superimposed upon the true horizontal plane. In the Tip-Group, the horizontal bone remodeling/tooth movement ratio was 1:1.63, and in the Torque-Group it was 1:1.66. Because the amount of tooth movement and the amount of bone remodeling were not the same in both groups, in the Tip-Group the root apex moved away from the palatal cortical plate and closer to the labial cortical plate, whereas in the Torque-Group the root moved away from the labial cortical plate and closet to the palatal cortical plate. Therefore, there are limitations in the amount of incisor retraction in patients with a very thin anterior cortical plate in the maxilla, and in patients with severe skeletal discrepancies orthognathic surgery should be considered and when orthodontic camouflage treatment is the only possible method, the orthodontist must be aware of the limitations of treatment.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.175-184
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• 1993

Abstract Co-and/or AI-added Nd-Fe-B-based magnetic alloys were fabricated by using vacuum induction melting frunace, and melt-spun ribbons were made of the magnetic alloys with single roll rapid quenching method. The variation of magnetic properties of the melt-spun ribbons as a function of Cuwheel velocity (Vs) were investigated. Bonded magnets were made of the optimally quenched ribbon fragments, and the magnetic properties of the melt-spun ribbons and the bonded magnets were studied, relating to the microstructure and crystalline structure. Cu-wheel surface velocity had a strong effect on the magnetic properties of the melt-spun ribbons, and the maximum properties were obtained around Vs =20m/sec. The optimally quenched ribbon had a cellura-type microstructure, in which fine N$d_2$F$e_14$B grains were surrounded by thin Nd-rich phase. In case of a 2.1at% AI-added melt-spun ribbon, the magnetic properties were as follows: iHc, Br, and (BH)max were 15.5KOe, 7.8KG and 8.5MGOe respectively. And resin bonded magnets were fabricated by mixing optimally quenched ribbon fragments with 2.5wt % polyamide resin, compacting and binding at room temperature. The iHc, Br and (BH)max of bonded magnet were lO.2KOe, 4.4KG and 3.3MGOe respectively. And hot-pressed magnets were made by pressing the overquenched ribbons at high temperature. The magnetic properties of hot-pressed magnets were better than those of bonded magnets, and when the holding time was 8 minutes, the iHc, Br, and (BH)max of the hot-pressed magnet were 1O.8KOe, 7.3KG and 8.0MGOe respectively. Domain structure was mainly maze pattern, which means that the easy magnetization axis could be aligned, and the domain width of the hot-pressed magnets was smaller than that of bonded magnets.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.7
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• pp.831-841
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• 2010

The conventional vertical probe has the thin and long signal path that makes transfer characteristic of probe worse because of the S-shaped structure. So we propose the new vertical probe structure that has branch springs in the S-shaped probe. It makes closed loop when the probe mechanically connects to the electrode on a wafer. We fabricated the proposed vertical probe and measured the transfer characteristic and mechanical properties. Compared to the conventional S-shaped vertical probe, the proposed probe has the overdrive that is 1.2 times larger and the contact force that is 2.5 times larger. And we got the improved transfer characteristic by 1.4 dB in $0{\sim}10$ GHz. Also we developed the simulation model of the probe card by using full-wave simulator and the simulation result is correlated with measurement one. As a result of this simulation model, the cantilever probe and PCB have the worst transfer characteristic in the probe card.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• ALGAE
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• v.29 no.2
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• pp.75-99
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• 2014

A small dinoflagellate, Ansanella granifera gen. et sp. nov., was isolated from estuarine and marine waters, and examined by light microscopy, scanning electron microscopy, and transmission electron microscopy. In addition, the identity of the sequences (3,663-bp product) of the small subunit (SSU), internal transcribed spacer (ITS) region (ITS1, 5.8S, ITS2), and D1-D3 large subunit (LSU) rDNA were determined. This newly isolated, thin-walled dinoflagellate has a type E eyespot and a single elongated apical vesicle, and it is closely related to species belonging to the family Suessiaceae. A. granifera has 10-14 horizontal rows of amphiesmal vesicles, comparable to Biecheleria spp. and Biecheleriopsis adriatica, but greater in number than in other species of the family Suessiaceae. Unlike Biecheleria spp. and B. adriatica, A. granifera has grana-like thylakoids. Further, A. granifera lacks a nuclear fibrous connective, which is present in B. adriatica. B. adriatica and A. granifera also show a morphological difference in the shape of the margin of the cingulum. In A. granifera, the cingular margin formed a zigzag line, and in B. adriatica a straight line, especially on the dorsal side of the cell. The episome is conical with a round apex, whereas the hyposome is trapezoidal. Cells growing photosynthetically are $10.0-15.0{\mu}m$ long and $8.5-12.4{\mu}m$ wide. The cingulum is descending, the two ends displaced about its own width. Cells of A. granifera contain 5-8 peripheral chloroplasts, stalked pyrenoids, and a pusule system, but lack nuclear envelope chambers, a nuclear fibrous connective, lamellar body, rhizocysts, and a peduncle. The main accessory pigment is peridinin. The SSU, ITS regions, and D1-D3 LSU rDNA sequences differ by 1.2-7.4%, >8.8%, and >2.5%, respectively, from those of the other known genera in the order Suessiales. Moreover, the SSU rDNA sequence differed by 1-2% from that of the three most closely related species, Polarella glacialis, Pelagodinium bei, and Protodinium simplex. In addition, the ITS1-5.8S-ITS2 rDNA sequence differed by 16-19% from that of the three most closely related species, Gymnodinium corii, Pr. simplex, and Pel. bei, and the LSU rDNA sequence differed by 3-4% from that of the three most closely related species, Protodinium sp. CCMP419, B. adriatica, and Gymnodinium sp. CCMP425. A. granifera had a 51-base pair fragment in domain D2 of the large subunit of ribosomal DNA, which is absent in the genus Biecheleria. In the phylogenetic tree based on the SSU and LSU sequences, A. granifera is located in the large clade of the family Suessiaceae, but it forms an independent clade.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.