• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.160-160
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• 1999

To reduce the fouling of heat exchangers, the plasma polymerized films was coated on the heat exchangers, and an effect of plasma polymerized film on fouling of heat exchangers was investigated. Monomer and reactive gases were used as the precursors of plasma polymerization. Plasma polymerized films were deposited with process parameters of pressure, power, and ratio of gases. Plasma polymerized films could be served as functional layers of good wettability and high resistance to corrosion. Wettability of plasma polymerized film could be controlled by the ratio change gas mixture. Hydrophilicity of plasma polymerized films on heat exchanger in air conditioner can provide improvement in performance of heat exchanger which results from good water drainage, decrease of pressure drop. DC-plasma polymerized films improve resistance to corrosion whcih is related to deposit formation in heat exchangers. The difference in the build up of fouling deposits between bare substrate and plasma polymerized substrate was investigated by scanning electron microscopy (SEM). An effect of plasma polymerized film on fouling of heat exchangers was discussed in terms of surface properties such as wettability, surface chemical state.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.378-378
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• 2007

In this study, liquid crystal (LC) aligning capabilities for homeotropic alignment on the $ZrO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $ZrO_x$ thin film were investigated. The uniform LC alignment on the $ZrO_x$ thin film surfaces and good thermal stabilities with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $ZrO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $ZrO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $ZrO_x$ thin film layer with. oblique electron beam evaporation.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.164-167
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• 2006

In this paper, we prepared Al doped ZnO thin films by using facing targets sputtering method. Al doped ZnO thin film was deposited with different working pressure on flexible substrate. We prepared Al doped ZnO thin film at room temperature, because the flexible substrate has weak thermal resistance. From the results, we could obtain thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$, an average transmittance of over 80% and a film thickness of 200nm.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.17-22
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• 2020

Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.19-19
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• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• Journal of Magnetics
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• 제4권1호
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• pp.22-25
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• 1999

Recently we reported the evolutionary transition from the positive magnetoresistance to the negative was discovered in the transverse configuration as the thickness of permalloy film increases. The discovered peculiarities of positive magnetoresistance phenomenal were explained in the framework of the uniform rotation model of the film magnetization reversal.

• 센서학회지
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• 제9권6호
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• pp.430-439
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• 2000

CO 가스 감지를 위한 두께 500-600 nm $In_2O_3$를 기저 물질로한 박막센서를 rf magnetron 방법을 이용하여 제작하였다. CO가스에 대한 감도 향상 및 -CH가 포함된 탄화수소 가스들과의 선택성을 높이기 위해 전이 금속인 Cobalt 촉매를 rf sputtering을 이용하여 초박막 형태로 0.7-2.8 nm 까지 두께를 조절하여 증착하고 $500^{\circ}C$ 열처리 후 가스 감도 특성을 조사하였다. CO에 대한 감도는 Co 두께 2.1 nm, 작동온도 $350^{\circ}C$에서 가장 우수하였고, $350^{\circ}C{\sim}400^{\circ}C$, Co (1.4 nm) 에서 $C_3H_8$에 대한 감도가 우수함을 알 수 있었다. 광전자 분석법 (x-ray photoelectron spectroscopy;XPS)을 통하여 초박막 Co가 표면이 $Co_2O_3$가 덮어진 CoO 형태로 존재함을 알 수 있었고, $(n-type)In_2O_3$-(p-type)CoO의 p-n junction 이 형성되었음을 확인하였다. 이러한 p-n junction type 가스센서에는 접합 경계면에서 형성된 전하 공핍층 (depletion layer)의 두께 변화에 따른 저항 변화에 의해 환원성 가스에 대한 감응 기구 (sensing mechanism)를 설명할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.