• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.165-169
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• 2004

This paper reports a miniaturized conductor-backed CPW (CBCPW) bandpass filter based on a thin film polyimide layer coated on CMOS-grade silicon. With a 20 ${\mu}{\textrm}{m}$-thick polyimide interface layer and back metallization on the CMOS-grade silicon, the interaction of electromagnetic fields with the lossy silicon substrate has been isolated, and as a result a low-loss and low-dispersive CBCPW line has been obtained. Measured attenuation constant at 20 GHz is below 1.2 ㏈/cm, which is compatible with the CPW on GaAs. In addition, by using the proposed CBCPW geometry, miniaturized BPF for Ku band application is designed and its measured frequency response shows excellent agreement with the predicted value with validating the performances of the proposed CBCPW geometry for RFIC interconnects and filter applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.185-185
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• 2010

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• 한국진공학회지
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• 제2권4호
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• 한국재료학회지
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• 제9권5호
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• pp.538-543
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• 1999

금속 배선 공정에서 응용되고 있는 reflow에 관한 이론올 살펴보고, 금속 박막 reflow에 영향을 미치는 인자 및 re­flow와 grain growth의 관계를 고찰하였다. 금속 박막 reflow의 구동력은 표연 위치에 따른 chemical potential의 차이이며, 이러 한 구동력에 의하여 원자가 이동하게 된다. 반도체 소자의 금속 배선을 제작하는 조건에서 원자의 이동은 주로 surface diffusion에 의하여 이루어진다. 금속 박막의 reflow에 영향율 미치는 인자로는 reflow 온도, reflow 시간, reflow 분위기, 박막 두께, 박막 재료, underlayer 재료, 패턴 size, aspect ratio가 있으며, 박막을 reflow시키는 동안에 발생하는 grain growth에 의하여 reflow 특성이 변할 것으로 예상되므로 reflow 시 grain growth의 영향을 고려하여야 하리라 생각된다.

• 한국재료학회지
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• 제21권3호
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• pp.174-179
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• 2011

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국표면공학회지
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• 제24권4호
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.53-59
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• 2001

Surfaces of PTFE and PVDF were modified by ion-assisted reaction (IAR) in which 1 keV $Ar^{+}$ ions were irradiated on the surface of the polymer with varying ion dose in an oxygen gas environment, and Cu, Pt, Al and Ag thin films were deposited on the modified polymers. Wettability of the modified polymers was largely improved by the formation of hydrophilic groups due to chemical reaction between polymer surface and the oxygen gas during IAR. The change in wettability in the modified polymers was also related to the change in surface morphology and roughness. Adhesion between metal films and polymers modified by IAR was significantly improved, so that no detachment was possible in the $Scotch^{TM}$ tape test. The increase of adhesion strength between the metal film and the modified PVDF was mainly attributed to the formation of hydrophilic groups, which interacted with the metal film. In the case of the modified PTFE, the enhanced adhesion to metal film could be explained by the change in surface morphology together with the formation of hydrophilic groups. The electrical properties of the metal films on the modified polymers were also investigated.