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Non Leaky Conductor-Backed CPW Based on Thin Film Polyimide on CMOS-grade Silicon for Ku-band Application  

Lee, Sang-No (Dept. of Electrical and Electronic Engineering, Yonsei University)
Lee, Joon-Ik (Dept. of Mechanical Engineering, Yonsei University)
Yook, Jong-Gwan (Dept. of Electrical and Electronic Engineering, Yonsei University)
Kim, Yong-Jun (Dept. of Mechanical Engineering, Yonsei University)
Publication Information
KIEE International Transactions on Electrophysics and Applications / v.4C, no.4, 2004 , pp. 165-169 More about this Journal
Abstract
This paper reports a miniaturized conductor-backed CPW (CBCPW) bandpass filter based on a thin film polyimide layer coated on CMOS-grade silicon. With a 20 ${\mu}{\textrm}{m}$-thick polyimide interface layer and back metallization on the CMOS-grade silicon, the interaction of electromagnetic fields with the lossy silicon substrate has been isolated, and as a result a low-loss and low-dispersive CBCPW line has been obtained. Measured attenuation constant at 20 GHz is below 1.2 ㏈/cm, which is compatible with the CPW on GaAs. In addition, by using the proposed CBCPW geometry, miniaturized BPF for Ku band application is designed and its measured frequency response shows excellent agreement with the predicted value with validating the performances of the proposed CBCPW geometry for RFIC interconnects and filter applications.
Keywords
Band Pass Filter (BPF); CMOS-grade silicon; Conductor-backed CPW (CBCPW); Radio Frequency Integrated Circuits (RFICs); Thin film polyimide;
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