• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1233-1236
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• 2005

We report a novel approach for encapsulating of cathode electrodes in DC plasma pixels. Anode and cathode electrodes are laterally placed on a single substrate. The encapsulated electrode minimizes the sputtering of the cathode without significantly altering the turn-on voltage-pressure characteristics. An abnormal glow in current-voltage characteristics is also observed.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.155-161
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• 2002

We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.318.2-318.2
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• 2014

The high contact resistance is still one of the major issues to be resolved in CdS/CdTe thin film solar cells. CdTe/Metal Schottky contact induced a high contact resistance in CdS/CdTe solar cells. It has been reported that the work function of CdTe thin film is more than 5.7 eV. There has not been a suitable back contact metal, because CdTe thin film has a high work function. In a few decades, some buffer layer was reported to improve a back contact problem. Buffer layers which are Te, $Sb_2Te_3$, $Cu_2Te$, ZnTe:Cu and so on was inserted between CdTe and metal electrode. A formed buffer layers made a tunnel junction. Hole carriers which was excited in CdTe film by light absorption was transported from CdTe to back metal electrode. In this report, we reported the variation of solar cell performance with different buffer layer at the back contact of CdTe thin film solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.426-427
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• 2007

Here we describe the formation of a self-assembled film of thin multiwalled carbon Nanotubes(t-MWNT) modified with hydroxy groups through hydrogen peroxide treatment. Morphologies of t-MWNT films could be controlled by the various coating method, such as filtering, drop casting, spraying method, etc. The results show that on densification of the CNT suspension during drying, multiple hydroxy group-modified MWNTs can be self-assembled through strong surface hydrogen bond interaction while MWNTs usually exist an entangled state in the film. The interaction between t-MWNT was illustrated from Raman spectrum of spray coated films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.72-75
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.167-170
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• 1995

LiCoO$_2$is a electrode material of Li ion Cell which is expected as the cell with a very high electric charge density. The recent study is mainly to focused on a high power secondary cell. If very thin Li ion Cell can be made in the scale of IC substrate it can be a electric souse in IC chip , micro machine or very thin electrical display etc. LiCoO$_2$thin film can be made by CVD, Laser ablation, E-Beam, ton Beam process, sputtering etc. But to make the material with a high quality for a cell is difficult as the electrode in cell have the fitable ratio in components and a lattice structure of bulk etc. In this study, LiCoO$_2$is made by R.F magnetron sputtering with the variance of substrate temperature and oxygen partial pressure etc. In the substrate temperature of 600$^{\circ}C$ and the oxygen rate of 10%, we can acquire the good thin film LiCoO$_2$compared wish a bulk material.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.118-124
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• 2016

In this study, experiments are conducted to improve spray coating uniformity by using second and third electrodes based on the electrospray atomization mechanism. The uniformity of fabricated thin films can be improved by adjusting the design of the second electrode. The implementation of the second electrode with an elongated hole and a bending angle of $90^{\circ}$ results in highly uniform films. In addition, induced area to substrate is increased by lowering the applied voltage using the third electrode with a round rod shape. A linear correlation between applied voltage and induced area is confirmed. Thin film thickness and surface roughness are measured after the fabrication of thin films through the electrospray process. It is confirmed that a thin film is formed having an average thickness of 273.44 nm, a thickness uniformity of less than 10%, and a surface roughness of 3 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.97-98
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• 2007

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.