• 전기화학회지
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• 제7권4호
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• pp.173-178
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• 2004

플라즈마 화학 기상 증착법으로 구리 막$(foil,\;35{\mu}m)$표면 위에 $SiH_4$와 Ar혼합가스를 공급하여 실리콘 박막을 증착 한 후 리튬 이온전지의 음극으로 활용하였다. 증착 온도에 따라 비정질 실리콘 박막과 copper silicide박막 형태의 다른 두 종류의 실리콘 박막 구조가 형성되는 것이 관찰되었다. $200^{\circ}C$ 이하의 온도에서는 비정질 실리콘 박막이 증착되었고, $400^{\circ}C$ 이상의 온도에서는 실리콘 라디칼과 확산된 구리 이온의 반응에 의한 그래뉼러 형태의 copper silicide박막이 형성되었다. 비정질 실리콘 박막은 copper silicide박막 보다 높은 용량을 나타냈으나 충·방전 반응에 의한 급격한 용량 손실을 나타냈다. 이것은 비정질 실리콘 박막의 부피 팽창에 의한 것으로 추정된다. 그러나 copper silicide 박막을 음극으로 사용했을 때는 copper silicide를 형성한 실리콘과 구리의 화학결합이 막 구조의 부피변화를 감소 시켜줄 뿐 아니라 낮은 전기 저항을 갖기 때문에 싸이클 특성이 향상되었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• 대한전자공학회논문지SD
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• 제38권11호
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• pp.781-790
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• 2001

실리콘 웨이퍼 두께에 따른 PZT 박막 적외선 감지소자의 성능변화를 이론적 해석 및 실험적 검증을 통하여 분석하였다. 실리콘이 모두 식각되었을 때 최대값을 보이는 전류응답도는 소자의 뒷면에 남아있는 실리콘의 두께가 50㎛로 두꺼워질 때까지 기하급수적으로 줄어들다가, 그 이상의 두께에서는 전류응답도의 감소폭이 현저히 줄어들었다. 실리콘이 모두 식각된 적외선 감지소자는 450㎛두께의 실리콘이 남아있는 소자에 비해 100배 이상의 높은 전류응답도를 보였다. 이러한 이론적인 해석을 검증하기 위하여 실리콘 기판미세가공법을 이용하여 세 가지 다른 실리콘 두께를 가진 적외선 감지소자를 제작하였다. 제작한 소자에서 측정한 전류응답도의 변화는 이론적 해석값과 좋은 일치를 보였다. 한편, 실험을 통하여 실리콘 두께가 소자의 전류응답도 뿐만 아니라 응답속도에도 큰 영향을 준다는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.332-333
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• 2008

DC magnetron sputtering was used to deposit p-type polycrystalline silicon on n-type Si(100) wafer. The influence of film microstructure properties on deposition parameters (DC power, substrate temperature, pressure) was investigated. The substrate temperature and pressure have the important influence on depositing the poly-Si thin films. Smooth ploy-Si films were obtained in (331) orientation and the average grain sizes are ranged in 25-30nm. The grain sizes of films deposited at low pressure of 10mTorr are a little larger than those deposited at high pressure of 15mTorr.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.445-446
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• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.173-176
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• 2004

Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.17-22
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• 2020

Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.

• Current Photovoltaic Research
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• 제1권1호
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.