• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• Journal of the Korean Society of Food Science and Nutrition
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• v.22 no.3
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• pp.307-312
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• 1993

Methanol extract of dried persimmon leaves was fractionated to hexane, chloroform, ethyl acetate, butanol, and aqueous tractions. Hexane, butanol, and aqueous fractions had high yields of extracts. Hexane fraction among these fractions showed the highest inhibition rate on the mutagenicities of aflatoxin (AFB$_1$), dimethyl-amino-bi-phenyl (DMAB), N-methyl-N'-nitro-N-nitrosoguanidine (MNNG), and 4-nitroquinoline-1-oxide (4-NQO) in Salmonella typhimurium TA100. Hexane fraction was further fractionated into eight fractions by silica gel column c-hromatography and thin layer chromatography (TLC). The fraction 5 on TLC exhibited the highest antimutagenic activity on AFB$_1$, DMAB, and MNNC. 1'-oxocannabinol, 3B-acetoxy-17-methyl-5a-18 (13-17) abeoardrost-13-one, 4-methoxy-2'6'-dinitro-3, 5-di-t-butylbiphenyl, 8, 9-dihydro-5, 6-dimethoxy-dibenz ［c, h］isoquino ［2, 1, 8-1 ma］carbazole-11, 16-dione were tentatively identified from this antimutagenic fraction by GC-MS.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.11 no.1
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• pp.130-152
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• 1989

The purpose of this study was to observe the effect of intermaxillary fixation on the chondrocytes of the mandibular condyle under the light and the electron microscope. For this study, twenty rabbits were placed in maxillomandibular fixation, and two were used as a control group. The experimental group was subdivided into 3, 7, 14, 21 and 28 day group. After the experimental period of 3, 7, 14, 21 and 28 days, the animals were sacrificed with a vascular perfusion of 2.5% glutaraldehyde. The condylar processes were exenterated, and decalcified in 0.1M EDTA with 2.5% glutaraldehyde solution for two weeks. The specimens were rinsed with phosphate buffer solution and the post-fixation was carried out with 2% osmium tetroxide at $4^{\circ}C$ for two hours. Thereafter the specimens were dehydrated in alcohol series, cleared with propylene oxide and embedded in Epon 812 resin. Thin sections and ultra-thin sections were made, and the cellular structures of the condylar cartilages were observed with light and electron microscope. The results were as follows: 1. In the intermaxillary fixation group, the cartilaginous tissues of mandibular condyles showed a marked decrease in the thickness compared to the control group. 2. A remarkable change was noticed in the proliferating and the hypertrophic zone of the condylar cartilages in the experimental group. 3. An atrophic change of the condylar cartilage was appeared in the 3 day experimental group and degenerative change was observed in the 7 day experimental group, and recovery was seen in thereafter 14 day experimental group. 4. Calcification, degeneration and resorption of condylar cartilage were recognizable, and the cellular zone of the condylar cartilage was appeared indistinctly in 3 day and 7 day experimental group. The chondroblasts, however, were differentiated into chondrocytes and resumed mitosis, and then the cellular zones of the condylar cartilage were reorganized from the 14 day experimental group under the findings of light microscope. 5. Under the findings of electron microscope, atrophic changes and decrease in number of intracellular organelles, degenerative changes of cytoplasm, and pyknosis of nuclei were observed in early stage, however, a gradual regeneration and reorganization of the intracellular organelles were observed from 14 day experimental group.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.248-255
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• 2020

The effects of the coating thickness on the thermal durability and thermal stability of thermal barrier coatings (TBCs) with a gradient coating thickness were investigated using a flame thermal fatigue (FTF) test and thermal shock (TS) test. The bond and topcoats were deposited on the Ni-based super-alloy (GTD-111) using an air plasma spray (APS) method with Ni-Cr based MCrAlY feedstock powder and yttria-stabilized zirconia (YSZ), respectively. After the FTF test at 1100 ℃ for 1429 cycles, the bond coat was oxidized partially and the thermally grown oxide (TGO) layer was observed at the interface between the topcoat and bond coat. On the other hand, the interface microstructure of each part in the TBC specimen showed a good condition without cracking or delamination. As a result of the TS test at 1100 ℃, the TBC with gradient coating thickness was initially delaminated at a thin part of the coating layer after 37 cycles, and the TBC was delaminated by more than 50% after 98 cycles. The TBCs of the thin part showed more oxidation of the bond coat with the delamination of topcoat than the thick part. The thick part of the TBC thickness showed good thermal stability and oxidation resistance of the bond coat due to the increased thermal barrier effect.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.12-16
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• 2012

Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.