• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2015

차세대 디스플레이 소자로서 TAOS TFT (transparent amorphous oxide semiconductor Thin Film Transistor)가 주목 받고 있다. 또한, 최근에는 값 비싼 전자 제품을 저렴하고 간단히 처분 할 수 있는 시스템으로 대신 하는 연구가 진행되고 있다. 그중, cellulose-fiber에 전기적 시스템을 포함시키는 e-paper에 대한 관심이 활발하다. cellulose fiber는 가볍고 깨지지 않으며 휘는 성질을 가지고 있다. 가격도 저렴하고 가공이여 용이하여 차세대 기판의 재료로서 주목받고 있다. 하지만, cellulose-fiber 위에는 고온의 열처리공정과 고품질 박막 성장이 어려워서 TFT 제작에 어려움을 겪고 있다. 이러한 문제를 해결하기 위해서 산화물 반도체를 이용하여 TFT를 제작한 사례가 보고되고 있다. 또한, 채널 물질 뿐만 아니라 cellulose fiber에도 다른 물질을 첨가하거나 증착하여 전기적 화학적 특성을 개선시킨 사례도 많이 보고되고 있다. 본 연구에서는 가장 저품질의 용지로 알려진 신문지와 A4용지를 gate dielectric을 이용하여서 a-IGZO TFT를 제작하였다. 하지만, cellulose fiber로 만들어진 TFT의 경우에는 고온의 열처리가 불가능 하다. 따라서 저온에서 높을 효율은 보이는 microwave energy를 이용하여 열처리를 진행하였다. 추가적으로 저품질의 종이의 특성을 개선시키기 위해서 high-k metal-oxide solution precursor를 첨가 하여 TFT의 특성을 개선시켰다. 결과적으로 cellulose fiber에 metal-oxide solution precursor을 첨가하는 공정과 micro wave를 조사하는 방법을 사용하여 100도 이하에서 cellulose fiber를 저렴하고 우수한 성능의 TFT를 제작에 성공하였다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• Current Applied Physics
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• 제18권11호
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• 대한금속재료학회지
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• 제49권2호
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• pp.153-160
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• 2011

The AISI 216L stainless steel with a composition of Fe-16Cr-6Ni-6Mn-1.7Mo (wt.%) was oxidized at $700{\sim}900^{\circ}C$ in air for 100 h. At $700^{\circ}C$, a thin $Mn_{1.5}Cr_{1.5}O_4$ oxide layer with a thickness of $0.4{\mu}m$ formed. At $800^{\circ}C$, an outer thin $Fe_2O_3$ oxide layer and a thick inner $FeCr_2O_4$ oxide layer with a total thickness of $30{\mu}m$ formed. The non-adherent scale formed at $800^{\circ}C$ was susceptible to cracking. At $900^{\circ}C$, an outer thin $Fe_2O_3$ oxide layer and a thick inner $Mn_{1.5}Cr_{1.5}O_4$ oxide layer formed, whose total thickness was $10{\sim}15{\mu}m$. The scales formed at $900^{\circ}C$ were non-adherent and susceptible to cracking. 216 L stainless steel oxidized faster than 316 L stainless steel, owing to the increment of the Mn content and the decrement of Ni content.

• 한국분말재료학회지
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• 제25권1호
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• pp.7-11
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• 2018

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

• 대한기계학회논문집B
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• 제39권5호
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• pp.463-469
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• 2015

산화그래핀 소재를 합성하여 투명한 박막 코팅기술을 개발하고 특성을 평가하였다. 스핀과 스프레이 공정을 동시에 이용하여 산화그래핀을 유리 기판에 균일하게 박막코팅을 하였다. 균일하게 산화그래핀을 스핀-스프레이 공정을 이용하여 박막코팅을 하기 위하여 유리기판을 amine-functional group으로 표면개질을 하였다. 또한, 스핀-스프레이 공정을 이용하여 산화그래핀 박막을 4층까지 적층을 하였고 86% 이상의 투명도를 확보하였다. 이와 같은 합성된 산화그래핀 박막소재의 스핀-스프레이 코팅 기술은 다양한 전자제품들의 display를 대면적으로 코팅할 수 있을 것으로 기대되어진다.

• 센서학회지
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• 제14권1호
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.