• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.20-25
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• 2018

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.481-485
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• 2018

In this study, oxide/metal/oxide-type transparent electrodes based on Al and ZnO were investigated. Thin films of these materials were sputter-deposited at room temperature. To evaluate the thickness dependence of the oxide layers, the top and bottom ZnO layers were varied in the range of 5~80 nm and 2.5~20 nm, respectively. When the thicknesses of the top and bottom ZnO layers were fixed at 30 nm and 2.5 nm, a maximum transmitance of 66% and sheet resistance of $16.5{\Omega}/{\square}$ were achieved, which is significantly improved compared with the Al layer without top and bottom ZnO layers showing a maximum transmitance of 44.3% and sheet resistance of $44{\Omega}/{\square}$.

• Membrane and Water Treatment
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• v.8 no.6
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• pp.613-623
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• 2017

We report the novel thin film composite RO membrane modified by graphene oxide. The thin film composite RO membrane was exposed to 2000 mg/l sodium hypochloride; thereafter it was subjected to different graphene oxide concentration ranging from 50 mg/l to 1000 mg/l in water. The resultant membrane was crosslinked with 5000 mg/l N-hydroxysuccinimide. The performance of different membranes were analysed by solute rejection and water-flux measurement. It was found that 100 mg/l graphene oxide exposure followed by 5000 mg/l N-hydroxysuccinimide treatment resulted in the membrane with the highest solute rejection of 97.78% and water-flux of 4.64 Liter per sqm per hour per bar g. The membranes were characterized by contact angle for hydrophilicity, scanning electron micrographs for surface morphology, energy dispersive X-Ray for chemical composition of the surface, Atomic force microscope for surface roughness, ATR-FTIR for chemical structure identification. It was found that the graphene oxide modified membrane increases the salt rejection performance after exposure to high-fouling water containing albumin. Highly hydrophilic, antifouling surface formation with the nanomaterial led to the improved membrane performance. Moreover, the protocol of incorporating nanomaterial by this post-treatment is simple and can be applied to any RO membrane after it is manufactured.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.577-578
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.691-692
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• 2010

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.20.2-20
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.24.1-24.1
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.31.1-31.1
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• 2006