• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.28-32
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• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Korean Journal of Optics and Photonics
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• v.12 no.5
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• pp.406-413
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• 2001

We report theoretical and experimental results for the wavelength and polarization selectivity of a fiber-to-planar waveguide coupler made of a side polished single mode fiber covered with a planer waveguide incorporating a thin metal film. A simple but exact approach to obtain the modal properties of multilayer planar waveguide with a thin metal film is described. The device was modeled into equivalent 1 dimensional structure and its behaviour was analyzed based on coupled mode theory. The effects of metal film thickness and refractive index of superstrate on the device properties were measured and explained.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.969-976
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• 1996

RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.231-238
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• 1997

Tantalum oxide thin filme has an amorphous structure and a high resistivity. Its stoichiometric structure was $Ta_2O_{5.3}$ and the transmission ratio was 80%. The high resistivity of $Ta_2O_{5.3}$ thin film electrolyte made an EC windows without electrical shottness, but the bleached/colored cur rent was very low because of the low ion conductivith. Upon adding moisture into the system, the $\Delta$T increased upto 25 %. proton concentration increase was the main cases to improve optical property. The influence of adding precious or transition metal film(~100 $\AA$ thickness) in $Ta_2O_5$layer on the color change performance was observed. The metal insertion layers had formed hydroxide and they behaved as a stable proton source. The transmission diffrnece and cycle life were greatly enhanced in the case of Ti inssertion.The $\Delta$T was 50% and the cycle life was 18, 000.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.3
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• pp.47-50
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• 2006

High-speed machining is a very useful tool and one of the most effective rapid manufacturing processes. This study sought to produce various high-speed machining materials with excellent quality and dimensional accuracy. However, high-speed machining is not suitable for microscale thin-walled structures because the structure stiffness lacks the ability to resist the cutting force. This paper proposes a new method that is able to rapidly produce very thin-walled structures. This method consists of high-speed machining followed by filling. A strong work-holding force results from the solidification of the filling materials. Low-melting point metal alloys are used to minimize the thermal effects during phase changes and to hold the arbitrarily shaped thin-walled structures quickly during the high-speed machining. We demonstrate some applications, such as thin-walled cylinders and hemispherical shells, to verify the usefulness of this method and compare the analyzed dimensional accuracy of typical parts of the structures.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.761-763
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• 2001

Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Dendrimer can be made with high regularity and controlled molecular weight. Peculiar features of the dendritic geometry are the large number of end groups as well as the shape persistence in higher generations, approaching spherical geometry. One of the most peculiar characteristics of dendritic macromolecules is their controlled molecular structure and orientation, which means that they have a practical application in achieving a highly organized molecular arrangement. We attempted to fabricate a G4-48PyA dendrimer LB films containing 48 pyridinealdoxime functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. And we have studied the electrical properties of the ultra-thin dendrimer LB films. The electrical properties of the ultra-thin dendrimer LB films were investigated by studying the current-voltage(I-V) characteristics of metal/dendrimer LB films/metal (MIM) structure. And rectifying behavior of the devices was occurred in applied field.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.5
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• pp.489-495
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• 1991

In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films for which the LB device has a metal/LB films(TCNQ)/metal sandwich structure. Our experiments show that the current at the LB device does not depend on the temperature at below 0 C. This phenomena confirm that the electrical conduction current is a tunnel current inherent to ultra thin films. However, the current depends upon the temperature near the room temperature. This phenomena indicates the electeical conduction current is a Schottky current inherent to ultra thin films.