A Study on the Electrical Properties and Fabrication of Electret Element by Functional Ultra Thin Films -Electrical conduction in LB Ultra Thin Films of TCNQ-

기능성 초박막을 이용한 Electret 소자의 제작과 전기물성에 관한 연구-LB초박막 TCNQ의 전기전도 특성-

  • 권영수 (동아대 공대 전기공학과) ;
  • 박만철 (동아대 대학원 전기공학과) ;
  • 이원재 (경원전문대 전자과) ;
  • 홍언식 (홍익대 산업대 전자,전기기공학과) ;
  • 강도열 (홍익대 공대 전기공학과)
  • Published : 1991.05.01

Abstract

In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films for which the LB device has a metal/LB films(TCNQ)/metal sandwich structure. Our experiments show that the current at the LB device does not depend on the temperature at below 0 C. This phenomena confirm that the electrical conduction current is a tunnel current inherent to ultra thin films. However, the current depends upon the temperature near the room temperature. This phenomena indicates the electeical conduction current is a Schottky current inherent to ultra thin films.

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