• 센서학회지
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• 제28권6호
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• 한국진공학회지
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• 제16권6호
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• pp.433-438
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• 2007

열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.

• Current Photovoltaic Research
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• 제2권4호
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• 대한기계학회논문집B
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• 제25권10호
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• pp.1327-1336
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• 2001

The structural modes driven by the low wave-number components of smooth elastic wall pressure provide a relatively weak coupling between the flow and the wall motion. If the elastic thin plate has any resonant mode whose wave-number of resonance coincides with $\omega$/U$\sub$c/, the power will be transmitted to those modes of vibration by the flows. We examine the problem in which the elastic thin plate is subject to pressure fluctuations under turbulent boundary layer. Measurements are presented of the frequency spectra of the near- and far-field pressures and radiated sound contributed by the various wave modes of the thin elastic plate. Dispersion equation for wave motions of elastic plate is used to investigate the effect of bending waves of relatively low wave number on radiated sound. The low wave-number motion of elastic plate is observed to have much less influence on the low-frequency energy of wall pressure fluctuations than that of the rediated sound. High amplitude events of the wall pressure are observed to weakly couple with high-frequency energy of radiated sound for case of low tension applied to the plate. The sound source localization is applied to the measurement of radiated sound by using acoustic mirror system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Current Photovoltaic Research
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• 제2권3호
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• 한국도로학회논문집
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• 제15권1호
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• pp.1-9
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• 2013

PURPOSES: The purpose of this study is to evaluate physical properties, durability, fatigue resistance, and long-term performance of poly-urethane concrete (PU) which can be possible application of thin layer on long-span orthotropic steel bridge and to check structural stability of bridge structure. METHODS : Various tests of physical properties, such as flexural strength, tensile strength, bond strength and coefficient of thermal expansion tests were conducted for physical property evaluation using two types of poly urethane concrete which have different curing time. Freezing and thawing test, accelerated weathering test and chloride ion penetration test were performed to evaluate the effect of exposed to marine environment. Beam fatigue test and small scale accelerated pavement test were performed to assess the resistance of PU against fatigue damage and long-term performance. Structural analysis were conducted to figure out structural stability of bridge structure and thin bridge deck pavement system. RESULTS: The property tests results showed that similar results were observed overall however the flexural strength of PUa was higher than those of PUb. It was also found that PU materials showed durability at marine environment. Beam fatigue test results showed that the resistances of the PUa against fatigue damage were two times higher than those of the PUb. It was found form small scale accelerated pavement test to evaluate long-term performance that there is no distress observed after 800,000 load applications. Structural analysis to figure out structural stability of bridge structure and thin bridge deck pavement system indicated that bridge structures were needed to increase thickness of steel deck plate or to improve longitudinal rib shape. CONCLUSIONS: It has been known that the use of PU can be positively considered to thin layer on long-span orthotropic steel bridge in terms of properties considered marine environment, resistance of fatigue damage and long-term performance.

• 대한기계학회논문집B
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• 제26권6호
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• pp.893-901
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• 2002

Effect of boundary layer thickness on the flow characteristics around a rectangular prism has been investigated by using a PIV(Particle Image Velocimetry) technique. Three different boundary layers(thick, medium and thin)were generated in the Atmospheric Boundary Layer Wind Tunnel at Pusan National University. The thick boundary layer having 670 mm thickness was generated by using spires and roughness elements. The medium thickness of boundary layer($\delta$=270 mm) was the natural turbulent boundary layer at the test section floor with fairly long developing length(18 m). The thin boundary layer($\delta$=36.5 mm) was generated on the smooth panel elevated 70cm from the wind tunnel floor. The Reynolds number based on the free stream velocity(3 ㎧) and the height of the model(40 mm) was 7.9$\times$10$^3$. The mean velocity vector fields and turbulent kinetic energy distributions were measured and compared. The effect of boundary layer thickness was clearly observed not only in the length of separation bubble but also in the location of reattachment point. The thinner the boundary layer thickness, the higher the turbulent kinetic energy Peak around the model roofbecame. It is strongly recommended that the height ratio between the model and the approaching boundary layer thickness should be encountered as a major parameter.

• Current Photovoltaic Research
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• 제6권1호
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.165-169
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• 2004

This paper reports a miniaturized conductor-backed CPW (CBCPW) bandpass filter based on a thin film polyimide layer coated on CMOS-grade silicon. With a 20 ${\mu}{\textrm}{m}$-thick polyimide interface layer and back metallization on the CMOS-grade silicon, the interaction of electromagnetic fields with the lossy silicon substrate has been isolated, and as a result a low-loss and low-dispersive CBCPW line has been obtained. Measured attenuation constant at 20 GHz is below 1.2 ㏈/cm, which is compatible with the CPW on GaAs. In addition, by using the proposed CBCPW geometry, miniaturized BPF for Ku band application is designed and its measured frequency response shows excellent agreement with the predicted value with validating the performances of the proposed CBCPW geometry for RFIC interconnects and filter applications.