• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.57-62
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• 1999

Polycrystaline thin film transistors are fabricated on the transparent glass substrate by a lamp-scan annealing. The line-shaped lamp scanning method, which is profitable for large area process, effectively radiated silicon film on glass substrate. Amorphous silion film absorbs the light which is emitted from halogen-lamp and it transformed into crystalline silicon by metal-induced lateral crystallization. In order to enhance the annealing effect, capping layer was deposited on the whole substrate. When the scan speed was 1-2mm/sec, lateral crystallization of amorphous silicon under capping layer was 18~27${\mu}m/scan$. The thin film transistor fabricated by this method shows high electron mobility over 130$cm^2/V{\cdot}sec$

• Journal of Korean Society of Forest Science
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• v.65 no.1
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• pp.60-67
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• 1984

This study was identified 6 species of the genus Acer in Korea by the method of thin layer chromatography on lipids in heart wood, and researched affinity among the species for the characteristics of color reaction. The results were summarized as follows; 1) Total-lipid in heart wood of the six species was 4.39%, mean free-lipid was 2.85% and mean bound-lipid was 1.54%. 2) All the six species; A. ginnala, A. mono, A. negundo, A. palmatum, A. saccharinum and A, triflorum were identified by the characteristics of color reaction. Judging from the color reactions, A. palmatum and A. triflorum seem to be closer than other species.

• Applied Chemistry for Engineering
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• v.1 no.2
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• pp.249-255
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• 1990

The conditions for separation and identification of anionic and nonionic surfactants by thin layer chromatography were investigated. Polyoxy alkylene-type nonionic surfactants were identified by the distribution of alkyl chain and alkylene oxide. Various polyoxyethylenated nonyl phenols were easily distinguished by densitometer. Some anionic surfactants were identified by $R_f$ and color, and the mixtures of anionic and nonionic surfactants were separated. Polyoxyethylenated fatty acid was separated into three parts of diester, monoester and polyethylene glycol, respectively, and the mixed ratio was determined by densitomer. All the experiments were carried out in 13-20 minutes, and the length of run was 80mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Journal of Biosystems Engineering
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• v.42 no.3
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• pp.190-198
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• 2017

Purpose: A thin-layer drying equation was developed to analyze the drying processes of soybeans (white and black beans) and investigate drying conditions by verifying the suitability of existing grain drying equations. Methods: The drying rates of domestic soybeans were measured in a drying experiment using air at a constant temperature and humidity. The drying rate of soybeans was measured at two temperatures, 50 and $60^{\circ}C$, and three relative humidities, 30, 40 and 50%. Experimental constants were determined for the selected thin layer drying models (Lewis, Page, Thompson, and moisture diffusion models), which are widely used for predicting the moisture contents of grains, and the suitability of these models was compared. The suitability of each of the four drying equations was verified using their predicted values for white beans as well as the determination coefficient ($R^2$) and the root mean square error (RMSE) of the experiment results. Results: It was found that the Thompson model was the most suitable for white beans with a $R^2$ of 0.97 or greater and RMSE of 0.0508 or less. The Thompson model was also found to be the most suitable for black beans, with a $R^2$ of 0.97 or greater and an RMSE of 0.0308 or less. Conclusions: The Thompson model was the most appropriate prediction drying model for white and black beans. Empirical constants for the Thompson model were developed in accordance with the conditions of drying temperature and relative humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.392-397
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• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

• Journal of Life Science
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• v.23 no.4
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• pp.537-541
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• 2013

We analyzed glycerol using thin-layer chromatography (TLC) and compared the separation resolution of some mobile phases. When acetonitrile:distilled water (85:15 v/v) was used as a mobile phase, the band of glycerol on the TLC was more distinctly and rapidly separated. Using TLC analysis, we prepared a calibration curve for the glycerol concentration vs. the area of the glycerol band in which the glycerol concentration of the x-axis was converted into a log-scale ranging from 3.0 to 0.0625 (%, w/v). Based on this calibration curve, the residual glycerol concentration (0.2 [%, w/v]) in biodiesel was determined successfully using TLC analysis. When the results of the TLC analysis were compared with those of a chemical and enzymatic assay, the results were fairly similar. We conclude that TLC without additional analytical instruments can be used as an alternative method for the quantitative analysis of the concentration of glycerol in biodiesel.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.91-95
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• 2010

A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit $TiO_2$ thin films on Si substrates using titanium isopropoxide(TIP) and $H_2O$ as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure $TiO_2$ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality $TiO_2$ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal $TiO_2$ coats into deep trenches with high aspect ratio.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.9-12
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• 2016

The process parameters of DC pulsed sputtering to produce a multi-layer thin film with light reflectance at a specific wavelength region were studied. The optical simulation of multi-layer thin films of the silicon dioxide ($SiO_2$) films with a low refractive index and the titanium dioxide ($TiO_2$) films with a high refractive index was done. Under a DC pulsed sputtering power of 2kW and 200 sccm(standard cubic centimeter per minute) argon gas, the silicon dioxide films with a refractive index of 1.46 in the range of oxygen gas ratios of 12% and a titanium dioxide film with a refractive index of 2.27 in the range of oxygen gas ratios of 1% were produced. The multi-layer structure of high refractive index/low refractive index/high refractive index was designed and fabricated. The characteristics of the fabricated multi-layer thin film structure showed a reflectance of more than 45% in the range, 780 to 1200nm. This multi-layer structure is expected to be used to block the near infrared wavelength light.