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http://dx.doi.org/10.5757/JKVS.2010.19.2.091

Fabrication of TiO2 Thin Films Using UV-enhanced Atomic Layer Deposition at Room Temperature  

Lee, Byoung-H. (Department of Chemistry, Hanyang University)
Sung, Myung-M. (Department of Chemistry, Hanyang University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.2, 2010 , pp. 91-95 More about this Journal
Abstract
A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit $TiO_2$ thin films on Si substrates using titanium isopropoxide(TIP) and $H_2O$ as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure $TiO_2$ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality $TiO_2$ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal $TiO_2$ coats into deep trenches with high aspect ratio.
Keywords
Atomic layer deposition; UV; $TiO_2$; Surface saturated reaction; TIP;
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