• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.270-270
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• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.215-220
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• 2007

Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.64.2-64.2
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• 2011

a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).

• 유체기계공업학회:학술대회논문집
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• 2004.12a
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• pp.419-426
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• 2004

A three-dimensional computation was conducted to understand effects of the inlet boundary layer thickness on the loss mechanism in a low-speed axial compressor operating at the design condition(${\phi}=85\%$) and near stall condition(${\phi}=65\%$). At the design condition, the flow phenomena such as the tip leakage flow and hub comer stall are similar independent of the inlet boundary layer thickness. However, when the axial compressor is operating at the near stall condition, the large separation on the suction surface near the casing is induced by the tip leakage flow and the boundary layer on the blade for thin inlet boundary layer but the hub corner stall is enlarged for thick inlet boundary layer. These differences of internal flows induced by change of the boundary layer thickness on the casing and hub enable loss distributions of total pressure to be altered. When the axial compressor has thin inlet boundary layer, the total pressure loss is increased at regions near both casing and tip but decreased in the core flow region. In order to analyze effects of inlet boundary layer thickness on total loss in detail, using Denton's loss models, total loss is scrutinized through three major loss categories in a subsonic axial compressor such as profile loss, tip leakage loss and endwall loss.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.200-201
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• 2004

The $H_{EB}$ was investigated for exchange coupling $20\;{\AA}\;Fe/x\;{\AA}\;NiO\;(type-I samples)$, $20\;{\AA}\;Fe/x\;{\AA}$ nonmagnetic layer $(MgO, Ag, Cu)/(500-x{\AA})$ NiO (type-II smaples). In type-I samples, the $H_{EB}$ is long-range coupling when looking from the point of view of the AFM. The $H_{EB}$ consistent with a generalized Meiklejohn-Bean approach. The critical thickness, which $H_{EB}$ is observed, is $130\;{\AA}$. In type-II samples, MgO layer more decouples the thin interfacial NiO from bottom NiO than other nonmagnetic layer. Nd the decoupling of Ag smallest. This means that the Ag layer has strong coupling the thin interfacial NiO with bottom NiO.

• The Korean Journal of Malacology
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• v.11 no.1
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• pp.70-77
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• 1995

The purpose of this study is to determine the differences of the conchiolin layer, prismatic layer and nacreous layer deposited within the shell of the freshwater family Unionidae. shether they possess species-specific characteristics and differences of the microstructure of these layers, A Scanning electron microscopic obwervations were conducted on seven species. The results indicate that all species possess thin and homogeneous layers within the periostracum. The prismatic layers of these species were composed of ednsely packed prisms. The prismatic layers of the shell in six species were typical shape of prisms. especially Inio douglasiae and Lamprotual gottschei. But, in Unio douglasiae sinuolatus, it was irregular and oblique prism shape.The nacreous layer of weven unionids characterized by possession of three types by lamillae shape: thin and homogeneous on genus Anodonta(0.4 pm size of lamella), Unio(1.3pm) and Lamprotual (1.7pm), homogeneous in shape and irregular in size of lamillae in Lanceolaria(1.0 pm)and irregulat in shape and size in Solenaia(0.2-0.4 pm). The microstructure of the naceous layer may be useful as a taxonomic character at the generic level.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1395-1398
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• 2007

MgO thin films were deposited by e-beam evaporator using the 2-step method for alternate current plasma display panels (AC-PDPs). Glancing angle deposition (GLAD) method was employed to produce various surface geometry of the thin film; the bottom layer was deposited on a substrate by normal e-beam evaporation method and the top layer was deposited on bottom layer with $85^{\circ}$ by GLAD method. Results show that firing and sustain voltages improved as the sharpness of surface and isolated columnar structures increases, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.