• Title/Summary/Keyword: Thin films

Search Result 9,530, Processing Time 0.045 seconds

Effect of Oxyfluorination on Electroless Ni Deposition of Carbon Nanotubes (CNTs) and Their EMI Shielding Properties (탄소나노튜브의 무전해 니켈도금 및 전자파 차폐 특성에 미치는 함산소불소화의 영향)

  • Choi, Ye Ji;Lee, Kyeong Min;Yun, Kug Jin;Lee, Young-Seak
    • Applied Chemistry for Engineering
    • /
    • v.30 no.2
    • /
    • pp.212-218
    • /
    • 2019
  • To investigate the effect of the oxyfluorination of carbon nanotubes (OF-CNTs) on electroless Ni deposition and electromagnetic interference shielding efficiency (EMI SE), CNTs were treated with a mixture of oxygen and fluorine gases and sequentially deposited with nickel. These samples were then manufactured into thin films on a polyimide film to evaluate their EMI SE. The surface chemical property of OF-CNTs was investigated by X-ray photoelectron spectroscopy. From the results of thermogravimetric and scanning electron microscopic analyses, it was found that both the amount of deposited Ni and the surface morphology changed depending on oxyfluorination. Moreover, the Ni-deposited CNTs pretreated with $O_2:F_2=1:9vol%$ exhibited the maximum EMI SE as approximately 19.4 dB at 1 GHz. These results were attributed to the formation of oxygen and fluorine functional groups on the surface of CNTs due to the oxyfluorination, and the functional groups enabled to deposit a suitable amount of Ni and improve the dispersion in the deposited solution.

Thermal Stress Induced Spalling of Metal Pad on Silicon Interposer (열응력에 의한 실리콘 인터포저 위 금속 패드의 박락 현상)

  • Kim, Junmo;Kim, Boyeon;Jung, Cheong-Ha;Kim, Gu-sung;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.29 no.3
    • /
    • pp.25-29
    • /
    • 2022
  • Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.

“Aluminium Nitride Technology-a review of problems and potential"

  • Dryburgh, Peter M.
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.75-87
    • /
    • 1996
  • This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

  • PDF

Evaluation of Multi-Level Memory Characteristics in Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 Cell Structure (Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 셀 구조의 다중준위 메모리 특성 평가 )

  • Jun-Hyeok Jo;Jun-Young Seo;Ju-Hee Lee;Ju-Yeong Park;Hyun-Yong Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.37 no.1
    • /
    • pp.88-93
    • /
    • 2024
  • To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

Highly ordered In2O3 zig-zag nanocolumns for selective detection of acetone (아세톤의 선택적 감지를 위한 In2O3 zig-zag nanocolumns)

  • Jae Han Chung;Ho-Gyun Kim;Yun-Haeng Cho;Junho Hwang;See-Hyung Park;Sungwoo Sohn;Su Bin Jung;Eunsol Lee;Kwangjae Lee;Young-Seok Shim
    • Journal of the Korean institute of surface engineering
    • /
    • v.57 no.1
    • /
    • pp.38-48
    • /
    • 2024
  • We fabricated In2O3 zig-zag nanocolumns(ZZNCs) by oblique angle deposition method based on e-beam evaporator for highly sensitive and selective CH3COCH3 sensor. Our results indicate that as the ZZNCs layer stacks, the gas response also increases. In comparison to thin films, ZZNCs at 5 layer show a 117-fold enhancement in gas response and a rapid response time (~2 s). When measured with various gases, it showed a high selectivity towards acetone. Under conditions of 80% R.H., exposure to CH3COCH3 gas theoretically indicated a detection limit of 1.2 part-per-billion(ppb). These results suggest the potential of In2O3 ZZNCs as a breath analyzer for the diagnosis of diabetes.

Heterostructures of SnO2-Decorated Cr2O3 Nanorods for Highly Sensitive H2S Detection (고감도 H2S 감지를 위한 SnO2 장식된 Cr2O3 nanorods 이종구조)

  • Jae Han Chung;Yun-Haeng Cho;Junho Hwang;Su hyeong Lee;Seunggi Lee;See-Hyung Park;Sungwoo Sohn;Donghwi Cho;Kwangjae Lee;Young-Seok Shim
    • Journal of Sensor Science and Technology
    • /
    • v.33 no.1
    • /
    • pp.40-47
    • /
    • 2024
  • The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO2) on p-type chromium oxide (Cr2O3) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO2 is incorporated. In comparison to Cr2O3 films, the bare Cr2O3 nanorods exhibits a response 3.3 times greater to 50 ppm H2S at 300℃, while the SnO2-decorated Cr2O3 nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH4, H2S, CO2, H2), a notable selectivity toward H2S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H2S, thus advancing the prospects of gas sensor technology.

Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
    • /
    • v.15 no.4
    • /
    • pp.395-403
    • /
    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

Preparationand Characterization of Rutile-anatase Hybrid TiO2 Thin Film by Hydrothermal Synthesis

  • Kwon, Soon Jin;Song, Hoon Sub;Im, Hyo Been;Nam, Jung Eun;Kang, Jin Kyu;Hwang, Taek Sung;Yi, Kwang Bok
    • Clean Technology
    • /
    • v.20 no.3
    • /
    • pp.306-313
    • /
    • 2014
  • Nanoporous $TiO_2$ films are commonly used as working electrodes in dye-sensitized solar cells (DSSCs). So far, there have been attempts to synthesize films with various $TiO_2$ nanostructures to increase the power-conversion efficiency. In this work, vertically aligned rutile $TiO_2$ nanorods were grown on fluorinated tin oxide (FTO) glass by hydrothermal synthesis, followed by deposition of an anatase $TiO_2$ film. This new method of anatase $TiO_2$ growth avoided the use of a seed layer that is usually required in hydrothermal synthesis of $TiO_2$ electrodes. The dense anatase $TiO_2$ layer was designed to behave as the electron-generating layer, while the less dense rutile nanorods acted as electron-transfer pathwaysto the FTO glass. In order to facilitate the electron transfer, the rutile phase nanorods were treated with a $TiCl_4$ solution so that the nanorods were coated with the anatase $TiO_2$ film after heat treatment. Compared to the electrode consisting of only rutile $TiO_2$, the power-conversion efficiency of the rutile-anatase hybrid $TiO_2$ electrode was found to be much higher. The total thickness of the rutile-anatase hybrid $TiO_2$ structures were around $4.5-5.0{\mu}m$, and the highest power efficiency of the cell assembled with the structured $TiO_2$ electrode was around 3.94%.

Enhanced Device Performance of IZO-based oxide-TFTs with Co-sputtered $HfO_2-Al_2O_3$ Gate Dielectrics (Co-sputtered $HfO_2-Al_2O_3$을 게이트 절연막으로 적용한 IZO 기반 Oxide-TFT 소자의 성능 향상)

  • Son, Hee-Geon;Yang, Jung-Il;Cho, Dong-Kyu;Woo, Sang-Hyun;Lee, Dong-Hee;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.48 no.6
    • /
    • pp.1-6
    • /
    • 2011
  • A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

Dose Distribution According to the Tissue Composition Using Wedge Filter by Radiochromic Film (쐐기필터 사용 시 레디오크로믹 필름을 이용한 조직에 따른 선량분포 연구)

  • Kim, Yon-Lae;Lee, Jeong-Woo;Park, Byung-Moon;Jung, Jae-Yong;Park, Ji-Yeon;Suh, Tae-Suk
    • Journal of radiological science and technology
    • /
    • v.35 no.2
    • /
    • pp.157-164
    • /
    • 2012
  • The purpose of this study is to analyze the dose distribution when wedge filter is used in the various tissue electron density materials. The dose distribution was assessed that the enhanced dynamic wedge filter and physical wedge filter were used in the solid water phantom, cork phantom, and air cavity. The film dosimetry was suitable simple to measure 2D dose distribution. Therefore, the radiochromic films (Gafchromic EBT2, ISP, NJ, USA) were selected to measure and to analyze the dose distributions. A linear accelerator using 6 MV photon were irradiated to field size of $10{\times}10cm^2$ with 400 MUs. The dose distributions of EBT2 films were analyzed the in-field area and penumbra regions by using dose analysis program. In the dose distributions of wedge field, the dose from a physical wedge was higher than that from a dynamic wedge at the same electron density materials. A dose distributions of wedge type in the solid water phantom and the cork phantom were in agreements with 2%. However, the dose distribution in air cavity showed the large difference with those in the solid water phantom or cork phantom dose distributions. Dose distribution of wedge field in air cavity was not shown the wedge effect. The penumbra width, out of the field of thick and thin, was observed larger from 1 cm to 2 cm at the thick end. The penumbra of physical wedge filter was much larger average 6% than the dynamic wedge filter. If the physical wedge filter is used, the dose was increased to effect the scatter that interacted with photon and physical wedge. In the case of difference in electron like the soft tissue, lung, and air, the transmission, absorption, and scattering were changed in the medium at high energy photon. Therefore, the treatment at the difference electron density should be inhomogeneity correction in treatment planning system.