• 대한기계학회논문집A
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• 제20권3호
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• pp.882-890
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• 1996

Mechanical properties, including Young's modulus, residual stress and rupture strength, of a thermally evaporated gold film have been measured form a blister test. In a theoretical study, the priniple of minimum potential energy and that of virtual work have been applied to the pressurized circular membrane problem, and load-deflection relations have been derived for typical membrane deflection mode of spheroidal shape. In an experimental study, circular gold membranes of 4800 A-thickness and 3.5mm diameter were fabricated by the silicon electropolishing technique. Mecahnical properties of the thin gold films were deduced from the load-deflection curves obtained by the blister test, Young's moduli, obtianed from blister test, have been in the range of 45-70 GPa, while those of bulk gold have been in the range of 78-80 GPa. Residual stresses in the evaporated gold films have been measured as 28-110MPa in tension, The rupture strength of the gold film has turned out to be almost equal to that of dental gold alloy (310-380MPa). It has been demonstrated that the present specimen fabrication method and blister test apparatus have been effective for simultaneous measurement of Young's modulus, residual stress and repture strength of thin solid films. Especially, the electropolishing technique employed here has provided a simple and practical way to fabricate thin membranes in a circular or an arbitrary shape, which could not be obtained by the conventional anisotropic silicon mecromachining technique.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.49-53
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• 2004

고분자 재료가 전자산업분야에서 절연재료나 접착제로 널리 사용되고 있다. 실리콘 기판위에 증착된 고분자 층에는 기판과의 열팽창계수 차이로 인해 열응력이 발생할 수 있다 고분자 층과 기판사이의 열적 성질의 차이로 인해 큰 잔류응력이 야기된다. 본 연구에서는 레이저 주사법을 이용하여 열적변형으로 인한 곡률변화를 측정한 후, 해석적 방법을 적용하여 수정된 박막 물성을 구하는 방법을 제시하고 있다.

• Structural Engineering and Mechanics
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• 제44권4호
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• pp.431-448
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• 2012

In this paper, the first-order shear deformation theory (FSDT) (Mindlin) for continuum incorporating surface energy is exploited to study the static behavior of ultra-thin functionally graded (FG) plates. The size-dependent mechanical response is very important while the plate thickness reduces to micro/nano scales. Bulk stresses on the surfaces are required to satisfy the surface balance conditions involving surface stresses. Unlike the classical continuum plate models, the bulk transverse normal stress is preserved here. By incorporating the surface energies into the principle of minimum potential energy, a series of continuum governing differential equations which include intrinsic length scales are derived. The modifications over the classical continuum stiffness are also obtained. To illustrate the application of the theory, simply supported micro/nano scaled rectangular films subjected to a transverse mechanical load are investigated. Numerical examples are presented to present the effects of surface energies on the behavior of functionally graded (FG) film, whose effective elastic moduli of its bulk material are represented by the simple power law. The proposed model is then used for a comparison between the continuum analysis of FG ultra-thin plates with and without incorporating surface effects. Also, the transverse shear strain effect is studied by a comparison between the FG plate behavior based on Kirchhoff and Mindlin assumptions. In our analysis the residual surface tension under unstrained conditions and the surface Lame constants are expected to be the same for the upper and lower surfaces of the FG plate. The proposed model is verified by previous work.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.23-30
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• 1999

이성질체에 따른 폴리이미드 박막의 잔류응력 영향과 모폴로지와의 상관관계가 조사되었다. 이를 위해, Poly(phenylene biphenyltetracarboximide) (BPDA-PDA)와 poly (oxydiphenylene biphenyltetracar-boximide) (BPDA-ODA)를 여러 다른 diamine인 1, 3-phenylene diamine (1, 3-PDA), 1.4-phenylene diamine (1,4-PDA)과 3.4'-oxydiphenylene diamine (3,4'-ODA) , 4,4'-oxydiphenylene diamine (4.4'-ODA)으로부터 제조하였다. 이들 박막에 대하여, Thin Film Stress Analyzer (TFSA)를 이용하여 공정온도 (25~$400^{\circ}C$)하에서 전구체의 열적 이미드화에 따라 실시간으로 폴리이미드 박막의 잔류응력 거동을 측정하였다. 폴리이미드 박막의 잔류응력은 면 방향 배향성과 사슬 질서도가 우수한 BPDA-1,4-PDA가 7MPa로 가장 낮게 나타났으며 BPDA-1,3-PDA, BPDA-3,4'-ODA, BPDA-4,4'-ODA의 경우 40~50Mpa 범위에 있었다. 이성질체에 따른 폴리이미드 박막의 잔류응력은 모폴로지 (사슬 강직도, 질서도, 배향성) 변화 및 유리전이 거동과 관련된 사슬 운동성을 이용하여 분석되었다.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2013년도 춘계학술대회 논문집
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• pp.454-459
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• 2013

For the purpose of rapid development and superior design quality assurance, sophisticated finite element model for SOM(Spatial Optical Modulator) piezo actuator of MOEMS device has been developed and evaluated for the accuracy of dynamics and residual stress analysis. Parametric finite element model is constructed using ANSYS APDL language to increase the design and analysis performance. Geometric dimensions, mechanical material properties for each thin film layer are input parameters of FE model and residual stresses in all thin film layers are simulated by thermal expansion method with psedu process temperature. $6^{th}$ mask design samples are manufactured and $1^{st}$ natural frequency and 10V PZT driving displacement are measured with LDV. The results of experiment are compared with those of the simulation and validate the good agreement in $1^{st}$ natural frequency within 5% error. But large error over 30% occurred in 10V PZT driving displacement because of insufficient PZT constant $d_{31}$ measurement technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.953-956
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• 2009

We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

• Journal of Information Display
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• 제11권3호
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• pp.113-118
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• 2010

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.