• 한국레이저가공학회지
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• 제10권4호
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• pp.18-22
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• 2007

In this paper, we suggested the femtosecond laser processing using the mask which makes Gaussian spatial beam distribution to a normalized distribution by Fresenel diffraction. Holography pattern of the size of $320{\times}320{\mu}m^2$ on the Cr thin film on glass substrate with a pixel size of $5{\times}5{\mu}m^2$ was fabricated according to the pattern generated by the iterative Fourier transform algorithm(IFTA) algorithm. We analysed the damage threshold with an assumption the power distribution as Gaussian profile as 45 $mJ/cm^2$. The regenerated image of letters through the diffractive pattern was well recognized at the screen.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.808-810
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• 2005

Inexpensive large area arrays of thin film transistors (TFTs) on flexible substrates will enable many new display products that cannot be cost effectively manufactured by conventional means. This paper presents a new approach for low cost manufacturing of electronic devices using roll-to-roll (R2R) processes exclusively. It was developed in partnership by Hewlett Packard Laboratories and Iowa Thin Film Technologies (ITFT), a solar cell manufacturer. The approach combines ITFT's unique processes for vacuum deposition and etching of semiconductors, dielectrics and metals on continuous plastic webs with a method HP has invented for the patterning and aligning the multiple layers of a TFT with sub-micron accuracy and feature size.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1122-1124
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• 2009

Organic thin-film transistors (OTFTs) were fabricated by using the transfer patterning method. In order to remove Au pattern easily, UV-curable polymer mold was surface treated. Au source/drain (S/D) pattern was transferred to insulator-coated substrate surface. Fabricated OTFTs were compared to OTFTs using vacuum-deposited Au S/D. Additionally, transistor diodes were characterized.

• 한국재료학회지
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• 제16권10호
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• Bulletin of the Korean Chemical Society
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• 제24권2호
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Progress in Superconductivity
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• 제9권2호
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• pp.188-192
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• 2008

We investigated the size effect on quench development in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current, and immersed in liquid nitrogen during the experiment. After the initial rapid rise, the resistance increased moderately and then slowly. In 4 inch-diameter meander lines, the period during which the resistance increased moderately was considerably longer than in 2 inch-diameter line. Moderate increase of resistance was originated from quench propagation. The film temperature was about 180 K at the point when the propagation was completed. The rate of resistance increase after the quench completion was not affected by the film size.

• 한국세라믹학회지
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• 제41권1호
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• 한국생산제조학회지
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• 제25권4호
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• pp.266-270
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• 2016

We present a useful and practical manufacturing technique that enables the structural conversion of delicate as-grown nanostructures to more beneficial and robust thin-film frameworks through controlled mechanical rolling. Functional nanostructures such as carbon nanotubes grown through chemical vapor deposition in a vertically aligned and very loosely packed manner, and thus difficult to manipulate for subsequent uses, can be prepared in an array of thin blades by patterning the growth catalyst layer. They can then be toppled as dominos through precisely controlled mechanical rolling. The nanostructures formulated to horizontally aligned thin films are much more favorable for device applications typically based on thin-film configuration. The proposed technique may broaden the functionality and applicability of as-grown nanostructures by converting them into thin-film frameworks that are easier to handle and more durable and favorable for fabricating thin-film devices for electronics, sensors, and other applications.

• 한국산학기술학회논문지
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• 제19권1호
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• pp.105-112
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• 2018

본 논문은 로이유리(Low emissivity glass) 표면에 증착되어 있는 금속박막의 전도 특성을 이용하여 발열유리(Heatable glass)를 제작하는 방법에 대해 제안한다. 로이유리의 발열량은 로이유리 표면저항에 의한 주울(Joule) 열에 의존하므로 소재의 표면저항을 측정함으로써 예측 및 설계가 가능하다. 본 연구에서는 저방사층이 11nm인 소프트로이유리 시료에 각 50mm 간격으로 은(Ag) 전극을 형성시키고, 4단자법으로 면저항을 측정하여 로이유리의 소비전력과 발열량을 예측한 후에, 제작 및 실험을 통해 발열성능을 확인하였다. 기존의 발열유리 제작방법은 크게 두 가지로 일반유리(Normal glass)에 니크롬(Nichrome) 열선을 삽입하는 방법과, 일반유리에 전도성 투명박막을 증착하는 방법이 있다. 니크롬 열선 삽입 방식은 발열성능은 우수하나 유리 고유의 투명성을 저해하고, 전도성 투명박막을 증착하는 방법은 투명성은 양호하나 공정이 복잡하여 실용성이 저하된다. 본 논문에서는 주로 건축물의 단열효과 향상을 위해 사용되는 로이유리를 이용하여 로이유리 전면에 코팅되어 있는 전도성 금속박막에 레이저 빔을 조사하여 원하는 발열성능을 가지는 발열유리를 제작하는 방법을 제안한다. 제안된 방법은 기존의 니크롬 열선을 삽입하는 방법에 비해 투명성이 양호하고, 전도성 투명박막을 증착하는 방법에 비해 제작과정이 보다 수월함을 확인하였다. 아울러, 레이저를 조사하여 로이유리의 표면 박막을 패터닝(Patterning) 하는 형태에 따른 발열특성의 비교와 로이유리에 적합한 레이저 출력조건을 제시하고자 한다.