• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.641-643
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• 2003

The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.49-53
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• 2018

최근 유연 소자, 투명 소자, MEMS 소자와 같은 다양한 소자를 결합하는 시스템 집적화 기술이 많이 개발되고 있다. 이러한 다종 소자 시스템 제조 기술의 핵심 공정은 칩 또는 웨이퍼 레벨의 접합 공정, 기판 연삭 공정, 그리고 박막 기판 핸들링 기술이라 하겠다. 본 연구에서는 Si 기판 연삭 공정이 투명 박막 트랜지스터나 유연 전극 소재로 적용되는 산화주석 박막의 전기적 성질에 미치는 영향을 분석하였다. Si 기판의 두께가 얇아질수록 Si d-spacing은 감소하였고, Si 격자 내에 strain이 발생하였다. 또한, Si 기판의 두께가 얇아질수록 산화주석 박막 내 캐리어 농도가 감소하여 전기전도도가 감소하였다. 얇은 산화 주석 박막의 경우 전기전도도는 두꺼운 산화 주석 박막보다 낮았으며 Si 기판의 두께에 의해 크게 변하지 않았다.

• 전기화학회지
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• 제13권3호
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• pp.175-180
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• 2010

전도성 폴리아닐린을 합성하여 용액 공정을 적용한 유기박막 투명전극을 제조, 그 특성을 조사하였다. 용액에 분산된 폴리아닐린을 스핀코팅하여 얻어진 박막 전극은 200 nm의 두께에서 $380{\Omega}/m^2$ 의 면저항을 보였고, 450 nm 이상의 파장에서 85% 이상의 균일한 광투과성을 나타내었다. 전극의 $130^{\circ}C$이상의 온도변화에서는 비교적 높은 저항변화율이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• 대한기계학회논문집A
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• 제28권11호
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• pp.1727-1732
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• 2004

A nickel layer was deposited onto the PZT thin films, serving both as a selective radiation absorption layer and as a top electrode. The absorption properties of such nickel coated multi-layered infrared detectors were studied in the visible and infrared wavelength ranges. The optimal thickness of the nickel layer on our substrate was 10nm. The maximum absorption coefficient of the deposited 10nm thick nickel layer was 0.7 at a 632nm wavelength. However, a striking asymmetric polarization hysteresis loop was observed in these PZT thin films with nickel as the top electrode. This asymmetric polarization was attributed to the difference between the dynamic pyroelectric responses in these Ni/PZT/Pt films poled either positively or negatively before the measurement. A positively poled film showed a 40% higher voltage response than a negatively poled detector.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Bulletin of the Korean Chemical Society
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• 제12권5호
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• pp.540-544
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• 1991

Thin film being formed on the surface of cobalt in the early stage of electrochemically induced passivation was studied by the three-parameter ellipsometry. The growth of the passive film was complete in a few seconds from the onset of the passivating potential, and was followed by a slight decrease in the thickness in 4-40 seconds. The optical constants of the passive film changed gradually during the changes in the thickness. The thickness and the optical properties at the steady state of passivation depended on the potential of the electrode. From the coulometric data and the optical properties, the composition of the passive films was deduced to be close to those of CoO, ${Co_3}{O_4}$ and ${Co_2}{O_3}$ depending on the potential. Cathodic reduction in the presence of EDTA was found to be an efficient way to obtain film-free reference surface of cobalt.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.211-214
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• 2007

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with thick bottom electrode are investigated. The ultra-thin Cr film (300 ${\AA}-thick$) between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency of three different resonator devices was observed to be ${\sim}2.7$ GHz, and the resonance characteristics $(S_{11})$ of the FBAR devices were found to have a strong dependence on the thickness of bottom electrode.