• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.258-259
• /
• 2005

[ $CuInSe_2$ ] thin films were fabricated at various fabrication conditions (substrate temperature, sputtering pressure, BC/RF power, vapor deposition, heat treatment). And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInSe_2$ thin films with stoichiometric composition. $CuInSe_2$ thin film was well made at the heat treatment of 500[$^{\circ}C$] of SLG/Cu/In/Se stacked elemental layer which was prepared by sputter and thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $1.27\sim9.88\times10^{17}[cm^{-3}]$, $49.95\sim185[cm^2/V{\cdot}s]$ and $10^{-1}\sim10^{-2}[\Omega{\cdot}cm]$, respectively

• 센서학회지
• /
• 제16권2호
• /
• pp.159-164
• /
• 2007

Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.

• 한국재료학회지
• /
• 제26권8호
• /
• pp.438-443
• /
• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• 한국세라믹학회지
• /
• 제54권3호
• /
• pp.249-256
• /
• 2017

We design Ge-Al multilayer assemblies as anode materials for Li-ion batteries, in which Ge and Al thin films are alternately deposited by a radio sputtering method. By sandwiching Ge layers between Al layer, the cyclability, rate capability, and capacity of Ge are improved significantly. The success of the Ge-Al multilayer is attributed to the Al films. To maintain the integrity of electrical contact, Al acts as an elastic layer, which can expand or shrink with the Ge film upon lithiation or delithiation. In addition, the presence of the Al film on the surface can prevent direct contact of Ge and electrolyte, thereby reducing the growth of a SEI layer. Importantly, with high electrical and ionic conductivities, the Al film provides efficient electrical and ionic routes for electrons and Li-ions to access the Ge film, promoting a high specific capacity and high rate capability for Ge.

• 한국전기전자재료학회논문지
• /
• 제23권2호
• /
• pp.153-158
• /
• 2010

The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• 한국표면공학회지
• /
• 제32권3호
• /
• pp.401-405
• /
• 1999

Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
• /
• pp.31-31
• /
• 1996

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
• /
• pp.55-55
• /
• 2007

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
• /
• pp.19-19
• /
• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• 한국결정성장학회지
• /
• 제13권5호
• /
• pp.241-246
• /
• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.