• 열처리공학회지
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• 제24권3호
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.272-272
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• 2014

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.499-502
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.

• 센서학회지
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• 제13권3호
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• pp.218-223
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• 2004

Thin film gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is acetonitrile ($CH_{3}CN$) that is simulant gas of blood agent gas. Sensing materials are $SnO_{2}$, $SnO_{2}$/Pt, and (Sn/Pt)oxidation with thickness from $1000{\AA}$ to $3000{\AA}$. Sensor was consisted of sensing electrode with interdigit (IDT) type in front side and a heater in back side. Its dimension was $7{\times}10{\times}0.6mm^{3}$. Fabricated sensor was measured as flow type and monitored real time using PC. The optimal sensing material for $CH_{3}CN$ was {Sn($3000{\AA}$)/Pt($30{\AA}$)}oxidation and its sensitivity and operating temperature were 30%, $300^{\circ}C$ in $CH_{3}CN$ 3 ppm.

• 한국재료학회지
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• 제19권6호
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• pp.325-329
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• 2009

Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

• 한국재료학회지
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• 제29권5호
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• pp.297-303
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• 2019

A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 한국재료학회지
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• 제20권5호
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• pp.235-240
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• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• 한국세라믹학회지
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• 제46권4호
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• pp.429-435
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• 2009

In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.