• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.2-176.2
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• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.91-96
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• 2007

The characteristic of tellurium thin films was studied for detecting nitrogen dioxide gas at room temperature. The film was deposited on $Al_{2}O_{3}$ substrate by using thermal evaporator. The subsequent process was heat treatment by several conditions. (temperature, flowed gases) Surface and grain boundary was investigated using SEM. The results showed that resistance of the tellurium film decreases reversibly in the presence of nitrogen dioxide. The sensitivity of this device depends on the gas concentration and detect lower concentrations less than 10 ppm.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.45-49
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• 1999

A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.549-550
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• 2010

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.77-80
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• 2010

Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1180-1186
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• 2001

W $O_3$-Sn $O_2$thin film sensors with approximately 1${\mu}{\textrm}{m}$ in thickness were fabricated by using a high-vacuum resistance-heating evaporator, were annealed at 50$0^{\circ}C$ for 4 hours in air, and then their crystallinities and surface microstructures were analyzed. As results of gas-sensing characteristics to oxidizing gas, N $O_2$, and reducing gas, CO, of 100 ppm, the highest gas sensitivities (S= $R_{gas}$/ $R_{air}$) were the W $O_3$thin-film sensor measured at 25$0^{\circ}C$ for N $O_2$(S≒1000) and the Sn $O_2$thin-film sensor measured at 15$0^{\circ}C$ to 25$0^{\circ}C$ range for CO (S≒0.25), respectively.ely.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.