• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.69-69
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• 1997

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.47-54
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• 2018

In this paper, we describe the thermal characteristics of the output voltages of ethanol gas sensor according to the amount of radiation incident on the infrared sensors located at each focal point of two elliptical waveguides. In order to verify the output characteristics of the gas sensor according to the amount of incident light on the infrared sensor, two combinations of sensor modules were fabricated. Hydrophobic thin film is deposited on one of the reflectors of sensor modules and one of the two infrared sensors was equipped with a hollow disk (10 Ø), and the temperature characteristics of the infrared sensor equipped with the hollow disk (10 Ø) and the infrared sensor without the disk were tested. The temperature was varied from 253 K to 333 K at 10 K intervals based on 298 K. The properties of ethanol gas sensor have been identified with respect to varying temperature for a range of ethanol concentration from 0 ppm to 500 ppm. In the case of an infrared sensor equipped with a hollow disk (10 Ø), the output voltage of the sensor decreased by 0.8 mV and 1 mV, respectively, as the temperature increased. Conversely, the output voltage of the diskless infrared sensor showed an average increase of 67 mV and 57 mV as the temperature increased. The ethanol concentrations estimated on the basis of results show an error of more than 10 % for less than 100 ppm concentration. However, if the ethanol concentration exceeds 100 ppm, the gas concentration can be estimated within the range of ${\pm}10%$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.280-285
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• 1999

$\alpha$-$Fe_2O_3$ thin film gas sensors were deposited at various temperature by CVD method. Polycrystalline $\alpha$-$Fe_2O_3$ thin films were deposited at $175^{\circ}C$ and $200^{\circ}C$. $\gamma$-$\alpha$-$Fe_2O_3$ phase was obtained when the deposition temperature was higher than $250^{\circ}C$. The crystallite size of $\alpha$-$Fe_2O_3$ was affected by the deposition and annealing temperature. The specimen deposited at $175^{\circ}C$ showed maximum sensitivity. In this condition, the sensitivity of $\alpha$-$Fe_2O_3$ thin film for NO gas (at 250 ppm) was 3.2 and response time (at 100ppm) was 12 second.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1716-1718
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• 1996

It is well known that the metallophthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as $NO_2$ and also chemically and thermally stable. Therefore, lots of MPcs are studied for the potential chemical sensor for $NO_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS spectrascopy and ellipsometry. Transfer condition, film characterization, and preliminary results of current-voltage(I-V) characteristics of these films exposed to $NO_2$ gas as a function of film thickness will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.162-165
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• 1996

It is well shown that the metallophthalocyanine (MPcs) are sensitive to tonic gaseous molecules such as NO$_2$ and also chemically and thermally stable. Therefore, lots of MPcs are studied for the potential chemical sensor for NO$_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyaninc ware prepared by Langmuir-Blodgett method and characterized by using UV-VIS spectrascopy and cllipsometry. Transfer condition, film characterization, and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$ gas as a function of film thickness will be discusscd.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.121-124
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• 1996

It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir -Blodgett method and characterized by using UV-VIS spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and temperature were discussed.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.