• Journal of Radiation Protection and Research
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• 제43권4호
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.16-16
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• 1996

• 한국세라믹학회지
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• 제37권11호
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• pp.1126-1129
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• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• 전기학회논문지P
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• 제52권1호
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• 전기의세계
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• 제25권1호
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• 한국결정성장학회지
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• 제6권2호
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• pp.177-184
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• 1996

본연구에서는 금속타겟을 이용한 반응성 스퍼터링법을 이용하여 PZT 박막의 전극 및 계면 특성의 개선을 위해, $Pt/SiO_{2}/Si$과 $Ir/SiO_{2}/Si$기판을 각각 사용하였으며, buffer layer로는 $PbTiO_{3}$을 이용하였다. Pt하부전극을 이용하여 PZT 박막제조시 randomly oriented PZT 박막이 얻어졌으나, buffer layer를 이용한 경우 (100)으로 배향된 결정성이 좋은 PZT 박막을 얻을 수 있었다. Ir하부전극을 이용한 경우, buffer layer증착에 따른 PZT 박막의 상형성이 다소 증진되었으며, Pt하부전극의 경우에 비해 잔류분극의 증가와 항전계의 감소를 관찰할 수 있었다. PZT 박막제조시 buffer layer의 이용에 따라 유전율이 증가함을 알 수 있었으며, 또한 Ir하부전극의 경우가 Pt하부전극의 경우보다 더 좋은 유전특성이 얻어졌다.