• Journal of the Korean institute of surface engineering
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• v.45 no.6
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• pp.248-256
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• 2012

A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1055-1061
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• 1999

Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure. substrate temperature. RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of IT0 films fabricated under the optimum deposition conditions (substrate temperature : $300^{\circ}C$. Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6$\times10^4$mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the IT0 films can be effectively used as the transparent shield material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.376-376
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• 2007

In Liquid Crystal Display (LCD) manufacturing, the organic over coat materials over coat materials for insulation layer of color filter with acryl ate was widely used. Therefore, we approach that the organic overcoat material can use to insulation layer for color filter and liquid crystal (LC) alignment layer in this research. The LC aligning capabilities was successful stuided for the first time. The organic overcoat layer and polymer layer was coated by spin-coating. In order to characterize the LC alignment, electric optic and residual DC and atomic force microscopy (AFM) image was used. The good LCD aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. Also the good LCD alignment capabilities treated polymer on surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1800 eV can be achieved. Comparing electro-optical characteristics between the Polyimide (PI) and the overcoat, the resultant transmittance of the overcoat considerably matched that of the PI and the residual DC also exhibited similar features with the PI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.1-130.1
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• 2013

We made attempts to improve photocatalytic activity of $TiO_2$ nanoparticles under visible light exposure by combining two additional treatments. N-doping of $TiO_2$ by ammonia gas treatment at $600^{\circ}C$ increased absorbance of visible light. By coating thin film of polydimethylsiloxane (PDMS), and subsequent vacuum-annealing at $800^{\circ}C$, $TiO_2$, became more hydrophilic, thereby enhancing photocatalytic activity of $TiO_2$. Four types of $TiO_2$ samples were prepared, bare-$TiO_2$, hydrophilic-modified $TiO_2$ ($h-PDMS/TiO_2$), N-doped $TiO_2$ ($N/TiO_2$) and hydrophilic-modified and N-doped $TiO_2$ ($h-PDMS/N/TiO_2$). Adsorption capability was evaluated under dark condition and photocatalytic activity of $TiO_2$ was evaluated by photodegradation of MB under blue LED (400 nm< ${\lambda}$) irradiation. N-doping on $TiO_2$ was characterized using XPS and hydrophilic modification of $TiO_2$ surface was analyzed by FT-IR spectrometer. It was found that N-doping and hydrophilic modification both had positive effect on enhancing adsorption capability and photocatalytic activity of $TiO_2$ at the same time. Particularly, N-doping enhanced visible light absorption of $TiO_2$, whereas hydrophilic surface modification increased MB adsorption capacity. By combining these two strategies, photocatalytic acitivity under visible light irradiation became the sum of individual effects of N-doping and hydrophilic modification.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of Fashion Business
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• v.21 no.6
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• pp.16-30
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• 2017

Currently, e-textile market is rapidly expanding and the emerging area of e-textiles requires electrically conductive threads for diverse applications, including wearable innovative e-textiles that can transmit/receive and display data with a variety of functions. This study introduces hybrid nano-structures which may help increase the conductivity of the textile threads for use in wearable and flexible smart apparels. For this aim, Ag was selected as a conductive material, and yarn treatment was implemented where silver nanowire (AgNW) and graphene flake (GF) hybrid structures overcome the limitations of the AgNW alone. The yarn treatment includes several treatment conditions, e.g., annealing temperature, annealing time, binder material such as polyurethane (PU), coating time, in order to search for the optimum method to form stable conductive nano-scale composite materials as thin film on the surface of textile yarns. Treatedyarns showed improved electrical resistance readings. The functionality of the spandex yarn as a stretchable conductive thread was also demonstrated. When the yarn specimens were treated with colloid of AgNW/GF, relatively good electrical conductivity value was obtained. During the extension and recovery cycles of the treated yarns, the initial resistance values did not deteriorate significantly, since the network of nanowire structure with the support of GF and polyurethane stayed flexible and stable. Through this research, it was found that when one-dimensional structure of AgNW and two-dimensional structure of GF were mixed as colloids and treated on the surface of textile yarns, flexible and stretchable electrical conductor could be formed.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.