• 한국재료학회지
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• 제32권5호
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• pp.243-248
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• 2022

This study demonstrates a different approach method to fabricate antimony selenide (Sb₂Se₃) thin-films for the solar cell applications. As-deposited Sb₂Se₃ thin-films are fabricated via electrodeposition route and, subsequently, annealed in the temperature range of 230 ~ 310℃. Cyclic voltammetry is performed to investigate the electrochemical behavior of the Sb and Se ions. The deposition potential of the Sb₂Se₃ thin films is determined to be -0.6 V vs. Ag/AgCl (in 1 M KCl), where the stoichiometric composition of Sb₂Se₃ appeared. It is found that the crystal orientations of Sb₂Se₃ thin-films are largely dependent on the annealing temperature. At an annealing temperature of 250 ℃, the Sb₂Se₃ thin-film grew most along the c-axis [(211) and/or (221)] direction, which resulted in the smooth movement of carriers, thereby increasing the carrier collection probability. Therefore, the solar cell using Sb₂Se₃ thin-film annealed at 250 ℃ exhibited significant enhancement in J_SC of 10.03 mA/cm² and a highest conversion efficiency of 0.821 % because of the preferred orientation of the Sb₂Se₃ thin film.

• Current Photovoltaic Research
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• 제5권1호
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.414-415
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• 2005

A solar cell is an element to transform the solar light energy into the electric energy in a moment. The single crystal element of high quality on which many studies were conducted in the past has a high efficiency of energy transformation, but its price competitiveness is so poor that it has failed to be popularized However, recently, in terms of an environment-friendly alternative energy, studies on applicability of the polycrystal solar cell have been actively under way. Among subject substances for such solar cell, $CuInSe_2$ has several good physical properties so that the greatest attention is paid to it as an optical absorption layer material for a low-cost solar cell of high efficiency. In order to manufacture the $CuInSe_2$ compound thin film, the unit element was deposited by using the sputtering method and the evaporation method and the heat treatment process was used in an electric furnace. Thereby, we intended to get a single-phase $CuInSe_2$ compound thin film.

• 한국재료학회지
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• 제29권9호
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• pp.553-558
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• 2019

$Cu_2ZnSn(S,Se)_4(CZTSSe)$ thin film solar cells areone of the most promising candidates for photovoltaic devices due to their earth-abundant composition, high absorption coefficient and appropriate band gap. The sputtering process is the main challenge to achieving high efficiency of CZTSSe solar cells for industrialization. In this study, we fabricated CZTSSe absorbers on Mo coated soda lime glass using different pressures during the annealing process. As an environmental strategy, the annealing process is performed with S and Se powder, without any toxic $H_2Se$ and/or $H_2S$ gases. Because CZTSSe thin films have a very narrow stable phase region, it is important to control the condition of the annealing process to achieve high efficiency of the solar cell. To identify the effect of process pressure during the sulfo-selenization, we experiment with varying initial pressure from 600 Torr to 800 Torr. We fabricate a CZTSSe thin film solar cell with 8.24 % efficiency, with 435 mV for open circuit voltage($V_{OC}$) and $36.98mA/cm^2$ for short circuit current density($J_{SC}$), under a highest process pressure of 800 Torr.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.

• 전기의세계
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• 제25권5호
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Current Photovoltaic Research
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• 제7권2호
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• pp.33-37
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• 2019

In this paper, we compared the performance of $Cu(In,Ga)(S,Se)_2$ (CIGSSe) thin film solar cell with CdS buffer layer deposited by irradiating 365 nm UV light with 8 W power in Chemcial Bath Deposition (CBD) process. The effects of UV light irradiation on the thin film deposition mechanism during CBD-CdS thin film deposition were investigated through chemical and electro-optical studies. If the UV light is irradiated during the solution process, the hydrolysis of Thiourea is promoted even during the same time, thereby inhibiting the formation of the intermediate products developed in the reaction pathway and decreasing the pH of the solution. As a result, it is suggested that the efficiency of the CdS/CIGSSe solar cell is increased because the ratio of the S element in the CdS thin film increases and the proportion of the O element decreases. This is a very simple and effective approach to control the S/O ratio of the CdS thin film by the CBD process without artificially controlling the process temperature, solution pH or concentration.

• 전기전자학회논문지
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• 제25권1호
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• pp.69-75
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• 2021

본 연구에서는 티타늄(Ti) 금속 박막을 사용해서 값비싼 산화주석(FTO) 전극을 대체된 염료감응형 태양전지(DSSC)의 제작 방법과 전기적 특성에 대해서 고찰하였다. Ti 박막의 증착 시간을 조절하여 박막의 두께를 변화시켰으며, Ti 박막의 두께가 두꺼워지면서 표면저항은 감소하였다. 대략 190nm 두께에서 FTO 박막의 표면저항과 비슷해짐을 알 수 있었으며, 250nm 두께에서 DSSC의 에너지 변환효율 4.24%로 가장 높았다. 더 나아가 DSSC 모듈을 제작해 평가함으로써 상용화의 가능성을 확인하였다.