• 한국표면공학회지
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• 제40권2호
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• 반도체디스플레이기술학회지
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• 제14권1호
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• pp.1-5
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• 2015

This paper deals with the residual stresses developed in an epoxy film deposited on Si wafer. First, chemically induced residual stresses due to the volumetric shrinkage in cross-linking resins during polymerization are treated. The curvature measurement method is employed to investigate the residual stresses. Then, thermally induced stresses are investigated along the interface between the epoxy film and Si wafer. The boundary element method is employed to investigate the whole stresses in the film. The singular stress is observed near the interface corner. Such residual stresses are large enough to initiate interface delamination to relieve the residual stresses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2521-2523
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• 1998

Freestanding flexible microstructures fabricated from deposited thin films become mechanically unstable when internal stresses exceed critical values. The residual stress and stress gradient of aluminum thin film were examined to make sure of fabricating the reproduceable aluminium structure. For good shape of micro mirror array and microstructures, the experiment was done varying thickness and deposition rate. As the aluminium film thickness increased from 0.8${\mu}m$ to 1.6${\mu}m$, the stress gradient decreased from 11.62MPa/${\mu}m$ to 2.62MPa/${\mu}m$. The residual stress values are from 42.4MPa to 62.24MPa of tensile stresses.

• 한국기계가공학회지
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• 제12권2호
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• pp.14-19
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• 2013

The size and distribution of residual stresses and the effect of the minimum mesh size were investigated by the a-Si thin film solar cell. Attributed to the difference in coefficient of thermal expansion of the a-Si and Ag concentrated residual stresses at the joint interface of dissimilar materials. The ${\sigma}y$ and ${\tau}xy$ didn't appear in the central part, but ${\sigma}x$ existed. However, ${\sigma}x$, ${\sigma}y$ and ${\tau}xy$ appeared in the edge part and concentrated residual stresses at the interface between a-Si and Ag. Minimum mesh size gets smaller, the concentration of ${\sigma}y$ was significantly and existence area was reduced. As a result, the failure of thin film solar cells during the cutting process can be explained by the residual stresses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2533-2535
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• 1998

In this paper, an effect of drive-in process temperature on the residual stress profile of the p+ silicon film has been investigated. The residual stress profile has been calculated as the fourth-order polynomials. All coefficients of the polynomials have been determined from the measurement of the vertical deflections of the p+ silicon cantilevers with various thickness and the tip displacement of the p+ silicon rotating beam. From the determination results of the residual stress profile, the average stress of the film thermally oxidized at 1000 $^{\circ}C$ is 15 MPa and that of the film oxidized at 1100 $^{\circ}C$ is 25 MPa. The profile of the residual stress through the high temperature drive-in process has a steeper gradient than the other case.

• 한국세라믹학회지
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• 제32권8호
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• 한국재료학회지
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• 제31권12호
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• pp.697-703
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• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.665-671
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• 1999

The paper represents the effects of the drive-in process parameters on the residual stress profile of the $p^+$ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the $p^+$ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.