• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.816-819
• /
• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.832-835
• /
• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Polymer(Korea)
• /
• v.33 no.5
• /
• pp.485-489
• /
• 2009

The temperature dependence of the structure of micelles formed by a deuterated polystyrene-poly(ethylene oxide) diblock copolymer (dPS-PEO) in heavy water were investigated with small-angle neutron scattering (SANS). SANS data were analyzed using the hard-sphere structure factor in combination with the form factor of a core-shell model. The micelle aggregation number and corona radius were obtained from the fits to the SANS data. The micelle aggregation numbers varied with temperature from 229 at $25^{\circ}C$ to 240 at $45^{\circ}C$, with a corresponding increase in the core radius. However, the shell thickness of micelles decreased with increasing temperature from 6.2 to 5.8 nm. These structural changes of micelles might be ascribed to the decrease in the hydration volume per hydrophilic group in the corona because of the increase in hydrophobicity of the PEO block with increasing temperature.

• Journal of the Korean Magnetics Society
• /
• v.4 no.2
• /
• pp.142-149
• /
• 1994

The Barkhausen noise was measured as the change of line width(39~1.22 mm) and scratching angle($90^{\circ}~50^{\circ}$) with respect of rolling direction in grain-oriented 3 % Si-Fe of 0.30 and 0.27 mm thickness. The two peak phenomena of the noise envelope observed for non-scratching and scratching of line width 39 mm was explained by large activation energy during $180^{\circ}$ domain wall nucleation and annihilation processes. The amplitudes of the noise envelpoes were decreased as the decrement of scratching line width, but did not almost changed below line width of 9.75 mm. It was explained that the decrease in the envelope with increasing scratching number is associated with lower activation energy of $180^{\circ}$ domain nucleation and annihilation in the vicinity of the scratching area. The noise power was decreased as narrower line width. The dependence of the power on the scratching angle was sharpest decreaded at the 50 angle.

• Journal of the Korean Magnetics Society
• /
• v.10 no.3
• /
• pp.112-117
• /
• 2000

We inserted CoO layer in NiO spin-valves to improve on magnetoresistance and exchange coupling field. The magnetoresistance ratio was increased from 4.5 % to 5.5 % with the increase of CoO thickness. We can not find the dependence between (111) texture and exchange coupling by the measurement of XRD of CoO/NiO spin-valves. The surface roughness of CoO layer, 6.1 $\AA$ is twice more than that of NiO layer, 3.1 $\AA$. The increase of exchange coupling field and coercive field in the CoO/NiO spin-valves will be due to increasing roughness. We prepared the NiO/CoO/NiO/CoO/NiO spin-valves to reduce coercive field and the coercive field decreased from 110 Oe to 50 Oe, and the coupling field is not changed from 70 Oe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.273-280
• /
• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.230-233
• /
• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.37 no.4
• /
• pp.49-54
• /
• 2000

A new functional organic thin film optical waveguide ion sensor is designed, which can select a specific ion, i.e., $Ca^{2+}$ -ion. The sensing membrane was composed of PVC-PVAC-PVA copolymer matrix based on anionic cation-selective chromoionophor(ETH5294), neutral ionophore(K23El), anionic site and plasticizer and it was coated on the etched glass substrate as embeded type optical waveguide itself. The sensor sensitivity dependence on waveguide length and thickness, contence of chromoionophore, and each mode was investigated. And this sensor could detect $Ca^{2+}$ ion in concentrations ranging from 1$\times$10­6~1M(with 0.05M tris-HCI buffer solution of pH7.4) by measuring the absorbance change at 514nm of light. Utilizing thin film membrane, the fast response time and high sensitivity are obtained. Also, it is expected that this sensor can be applied to various biochemical important ions.ons.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.39 no.4
• /
• pp.335-340
• /
• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.2
• /
• pp.111-117
• /
• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.