• Journal of Magnetics
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• v.2 no.4
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• pp.138-142
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• 1997

The magnetic and magneto-optical properties of Ni/Pt multilayers exhibiting square Kerr hysterisis loops at room temperature were studied. Squared polar Kerr hysterisis loops at room temperature in Ni/Pt multilayer thin films were obtained for the samples prepared by sequential dc magnetron sputter deposition of nickel and platinum with tNi=13-21$\AA$ and tPt=3.5-7.5$\AA$. The coercivity of these multilayers was in the range of 400-1100 Oe. The saturation magnetization was found to show an inverse dependence on nickel sublyaer thickness. About a monolayer of Ni at interface was observed to behave less magnetically than the interior Ni atoms. The polar Kerr rotation exhibited an increasing trend with decreasing wavelength in the spectral range of 7000-4000 $\AA$. The maximum of polar Kerr rotation was found to shift to higher wavelengths with increase in nickel sublayer thickness.

• Journal of Magnetics
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• v.16 no.2
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• pp.97-100
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• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

• Journal of Surface Science and Engineering
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• v.53 no.4
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• pp.144-152
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• 2020

In the manufacturing process of joining of aluminum alloy and polymer, the strength of the metal-polymer joining is greatly influenced by the nanostructure of the oxide film. In this study, we investigated the dependence of joining strength on the thickness, structure, pore formation and surface roughness of the formed film. After the two-step anodization process, the surface oxide layer became thinner and rougher resulting in higher joining strength with the polymer. More specifically, after the two-step anodization, the surface roughness, Ra increased from 2.3 to 3.2 ㎛ with pore of three-dimensional (3D) nanostructure, and the thickness of the oxide film was thinned from 350 to 250 nm. Accordingly, the joining strength of the aluminum alloy with polymer increased from 23 to 30 MPa.

• Journal of Magnetics
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• v.14 no.1
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• pp.31-35
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• 2009

Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

• Structural Engineering and Mechanics
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• v.59 no.2
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• pp.227-241
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• 2016

A circular plate with constant thickness, finite radius and stiff edge lying on an elastic halfspace is considered. The half-space consists of a soft functionally graded (FGM) layer with arbitrary varying elastic properties and a homogeneous elastic substrate. The plate bends under the action of arbitrary axisymmetric distributed load and response from the elastic half-space. A semi-analytical solution for the problem effective in whole range of geometric (relative layer thickness) and mechanical (elastic properties of coating and substrate, stiffness of the plate) properties is constructed using the bilateral asymptotic method (Aizikovich et al. 2009). Approximated analytical expressions for the contact stresses and deflections of the plate are provided. Numerical results showing the qualitative dependence of the solution from the initial parameters of the problem are obtained with high precision.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.441-444
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• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.100-100
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• 2013

Among recently discovered 2-dimensional materials, molybdenum disulfide has fascinating physical properties. It is atomically thin and is a semiconductor with with a similar level of bandgap with silicon. Especially, its properties get interesting when it becomes thinner. Its bandgap goes through bandgap transition from indirect to direct gap. Also its gap size increases as its thickness decreases. In this talk, I am going to present our recent work on characterization of its electrical and optical properties. We used Raman and PL spectroscopy to observe its property dependence on thickness. We fabricated electrical devices to study optimal condition for MoS2 devices. Also we synthesized large-area MoS2 films for devices applications.

• Korean Journal of Metals and Materials
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• v.47 no.6
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• pp.378-382
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• 2009

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.