• Journal of Sensor Science and Technology
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• v.18 no.5
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• pp.343-348
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• 2009

$NiO{\cdot}(Co_{0.25}Mn_{0.75})_2O_3$(Mn-Ni-Co) and $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thick films were screen printed on Pt patterned alumina substrate to investigate the effects of sintering temperature on humidity and temperature sensing properties of ceramic sensors. A raise in sintering temperature increased resistance and B constant of the Mn-Ni-Co temperature sensor. This may have derived from the synergic effects of the reduction in charge carriers caused by the substitution of Co for Mn as well as the formation of microcracks from the difference in thermal expansion coefficients. Dependence of resistance on humidity of the Mn-Ni-Co temperature sensor, however, was not found. BST films sintered at temperatures in the range of $1100^{\circ}C$ to $1150^{\circ}C$ showed excellent humidity sensing properties. The BST humidity sensor was faster in its response than the Mn-Ni-Co temperature sensor. The humidity sensor, however, proved to be unstable under various temperatures, suggesting a need for a temperature stabilizing device. In contrast, the Mn-Ni-Co temperature sensor was stable under humid conditions.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.92-95
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• 2003

The dissolved oxygen sensors with thick film type were fabricated for low cost products and the electrical properties were investigated in the different operating temperatures. Pt paste was used for working electrode and Ag/AgCl paste for reference electrode. The fabricated devices have fast response of current changes according to dissolved oxygen concentrations in the applied voltage of $0.6{\sim}0.8V$. This is expected to apply a chip and/or disposal dissolved oxygen sensors.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.57-65
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• 2001

Economical consumption of energy, longer life of lamps, higher lighting comfort and new aesthetic of illumination is subject of numerous research and development works. The halogen lamps are an example of positive solution some of above mentioned problems. The electronic transformers are more frequent used for their supply. In comparison with conventional transformers they have less weight, less volume and 60% less power tosses. Their advantages are particular visible, when the hybrid technique is applied. The paper presents the results of engineering research and development works carried out ill Private Institute of Electronic Engineering, in R. & D. Center for Hybrid Microelectronics and Resistors and in Technical School of Communications in Krakow, in the field of the design and exploitation tests of hybrid converters 220V AC /12V DC (electronic transformers) and electronic ballasts destined for the supply of halogen lamps 20W to 150W and fluorescent lamps respectively. To perform the converters, thick film technology and surface mount technology were used. For the protection of converter electronic circuit the thick film temperature sensor and transistors were applied. Moreover the paper presents the base application circuits of elaborated converters, their technical parameters and exploitation results. The development perspectives of hybrid domain of hybrid circuits are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.956-960
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• 2010

CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.224-229
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• 2002

• Journal of Biosystems Engineering
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• v.28 no.4
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• pp.335-342
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• 2003

A simple disposable thick-film potentiometric strip has been developed and evaluated for hydroponics application. The strip consisted of low ion-selective electrodes (ISE) fabricated by screen-printing technology. The electrochemical responses of ion sensors for nitrate, ammonium, potassium, and magnesium were measured with specially designed 16-channel low voltage signal transducers. The analytical characteristics of the sensors were comparable with those of conventional ISE sensors. The thick-film sensors exhibit linear relationships over five concentration decades. The concentration of N $O_3$ - ion in standard solution can be determined by direct potentiometric measurements without any conditioning before measurements. However, measurement of $K^{+}$, N $H_4$$^{+}$, and $Mg^{2+}$ ionic concentrations in nutrient solutions seems not feasible.