• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.110-110
• /
• 2009

Aerosol deposition method(ADM)는 상온에서 에어로졸화된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있는 공정으로서, 다양한 재료의 코팅이 가능하고, 코팅층의 조성 및 화학 양론비의 제어가 용이한 특징을 갖는다. 본 연구에서는 ADM을 이용하여 큰 유전상수, 압전계수, 초전계수, 탄성계수를 갖는 $BaTiO_3$ 분말을 원료로 하여 압전소자, 커패시터, 고전압용 유전체 등에 응용이 가능한 세라믹 층 형성에 관한 연구를 진행하였다. 또한 $BaTiO_3$ 같은 강유전체 세라믹을 이용하여 여러 가지 소자를 제조하는 경우 소자의 미세조직에 따라 물성이 영향을 받는 것으로 확인되어져 있다. 이에 본 연구에서는 세라믹 분말보다 상대적으로 탄성이 큰 polymer 분말을 첨가하여 후막 내부의 결정립의 크기가 20 nm 의 평균 결정립을 갖는 세라믹 후막에 비해 최대 10 배 정도까지 증가하는 것을 확인할 수 있었으며, 이에 따라 후막에서의 유전율 및 유전손실율의 전기적 특성 변화를 확인할 수 있었고, 이러한 물성변화에 대한 원인 고찰을 위하여 후막의 미세구조 및 화학조성 등에 대한 다양한 분석이 이루어 졌으며, 상온에서 성막되는 후막의 세라믹 층의 응용을 위한 최적의 공정조건을 제시하고자 한다.

• 한국재료학회지
• /
• 제16권3호
• /
• pp.151-156
• /
• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• 한국전기전자재료학회논문지
• /
• 제22권12호
• /
• pp.1089-1094
• /
• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as resistive gas sensors for ethanol ($C_2H_5OH$) detection. Sensor films were fabricated by air spray method for the multi-walled CNTs solution on glass substrates. Sensors were characterized by resistance measurements in the sensing system, in order to find the optimum detection properties for the ethanol gas molecular. The film that was sprayed with the MWCNT dispersion for 60 see, was 300 nm thick. And the electric resistivity is $2{\times}10^{-2}\;{\Omega\cdot}cm$. Also, the sensitivity and the linearity of MWVNT sensor for ethanol gas are 0.389 %/sec and 17.541 %/FS, respectively. The MWCNT film was excellent in the response for the ethanol gas molecules and its reaction speed was very fast, which could be using as ethanol gas sensor. The conductance of the fabricated sensors decreases when the sensors are exposed to ethanol gas.

• Current Photovoltaic Research
• /
• 제3권2호
• /
• pp.65-70
• /
• 2015

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
• /
• pp.214-217
• /
• 1999

We investigated the quench characteristics of meander line type resistive superconducting fault current limiters based on YBCO thin films grown on 2" diameter LaAlO$_3$ substrates. A gold layer was deposited onto the 0.4 ${\mu}$ m thick YBCO film to disperse the heat generated at hot spots, prior to patterning into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various amplitudes. The quench started at 10 A and was completed within 1 msec at the fault current of 65 A$_{peak}$. The dynamic quench characteristics were explained based on the heat conduction within the film and the heat transfer between the film and the surrounding liquid nitrogen. The heat transfer coefficient per unit area was estimated to be 3.0 W/cm$^2$K.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.239.1-239.1
• /
• 2011

Dye sensitized solar cells (DSC) are promising devices for inexpensive, nontoxic, transparent, and large-scale solar energy conversion. Generally thick $TiO_2$ nanoporous films act as efficient photoanodes with their large surface area for absorbing light. However, electron transport through nanoparticle networks causes the slowdown and the loss of electron transport because of a number of interparticle boundaries inside the conduction path. We have studied DSCs with precisely dimension-controlled $TiO_2$ nanotubes array as photoanode. $TiO_2$ nanotubes array is prepared by template-directed fabrication method with atomic layer deposition. Well-ordered nanotubes array provides not only large surface area for light absorbing but also direct pathway for electrons with minimalized grain boundaries. Large enlongated anatase grains in the nanotubes could enhance the conductivity of electrons, but also suppress the recombination with holes through defect sites during diffusion into the electrode. To study the effect of grain boundaries, we fabricated two kinds of nanotubes which have different grain sizes by controlling deposition conditions. And we studied electron conduction through two kinds of nanotubes with different grain structures. The solar cell performance was studied as a function of thickness and grain structures. And overall solar-to-electric energy conversion efficiencies of up to 7% were obtained.

• 전자공학회논문지D
• /
• 제35D권5호
• /
• pp.33-39
• /
• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
• /
• pp.389-402
• /
• 1999

Single crystal of Li2Cu1-xMxO4 (M=Ni, Zn) are promising as a substrate to realize superconducting electronic devices. The distribution coefficients of Ni and Zn to the Cu site in La2CuO4 (LCO) were estimated by the zone melting technique to grow high quality single crystals of La2Cu1-xMxO4(M=Ni, Zn). The distribution coefficient value of Ni was estimated to be 4.2 and that of Zn was estimated to be 0.66, respectively. Suitable solvent compositions were determined using these values to grow single crystals by he traveling floating zone (TSFZ) method. Single crystal of LCO, La2Cu1-xMxO4(M=Ni(x=0.01, 0.02, 0.03, 0.04), Zn(x=0.01, 0.02, 0.03) of high homogeneity were grown. The behaviors of the magnetization of these as-grown crystals do not indicate superconductivity except LCO. Ni or Zn substitution can make LCO non superconductor. This fact suggest that single crystals substituted by Ni or Zn are useful as substrate crystals.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.495-498
• /
• 2006

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature $(<200^{\circ}C)$ using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content $({\sim}0.9%)$ and a high deposition rate $({\sim}35{\AA}/sec)$. The film is applicable to thin film transistors on plastic substrates.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.224-224
• /
• 2008

고주파용 집적회로 기판소재로의 응용을 위해 세라믹 특유의 취성을 개선한 $Al_2O_3$-polyimide 복합체 후막을 에어로졸데포지션법을 이용해 제조하고 그 특성을 평가하였다. 그 결과 기공이 거의 없이 치밀한 구조를 갖는 $Al_2O_3$-polyimide 복합체 후막이 구리 및 유리 기판 상에 성막 되었음이 SEM 및 EDS을 통해 확인되었다. 상용 $Al_2O_3$ 출발 파우더를 사용한 복합체 제조시 1 MHz에서 유전율은 6.7, 유전 손실률은 0.026 이었다. 유전특성의 향상을 위하여 에어로졸데포지션법으로 성막된 $Al_2O_3$-polyimide 복합체 후막의 후속 열처리 결과 유전손실율이 0.026에서 0.007로 감소하였다. 또한 집적회로 기판소재로의 응용을 위한 저온화 제조공정 확립을 위하여 $Al_2O_3$ 출발 파우더의 공정 전 열처리 후 상온에서 성막한 경우에도 어떠한 후속 열처리 없이 유전손실률이 0.007로 감소하였다.