한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.495-498
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- 2006
50nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature $( < 200^{\circ}C)$ using Cat-CVD
- Cho, Chul-Lae (Dept. of Electronics Engineering, Sejong University) ;
- Lee, Sung-Hyun (Dept. of Electronics Engineering, Sejong University) ;
- Lee, Chang-Hoon (Dept. of Electronics Engineering, Sejong University) ;
- Lee, Dea-Hyun (Dept. of Electronics Engineering, Sejong University) ;
- Lee, Sang-Yoon (Samsung Advanced Institute of Technology (SAIT)) ;
- Kwon, Jang-Yeon (Samsung Advanced Institute of Technology (SAIT)) ;
- Park, Kyung-Bae (Samsung Advanced Institute of Technology (SAIT)) ;
- Kim, Jong-Man (Samsung Advanced Institute of Technology (SAIT)) ;
- Jung, Ji-Sim (Samsung Advanced Institute of Technology (SAIT)) ;
- Hong, Wan-Shick (Dept. of Nano Science and Technology, University of Seoul)
- Published : 2006.08.22
Abstract
The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature
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