• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.859-862
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• 2001

This study describes a selective Ag etching solution for use with pattern on the surface of copper. This etching solution uses potassium iodide and potassium sulfate as the ligand that coordinates to the metal ions and ferricyanide as the oxidant. The etching rate was depended on the concentration of co-ligands and time. But the etching rate wasn't depended on the pH(2∼6), and oxidant(K$_3$Fe(CN)$\_$6/). Complete etching of silver can be achieved rapidly within 90sec for 4.46${\mu}$m thick metal films when aqueous solutions containing K$_3$Fe(CN)$\_$6/, K$_2$S$_2$O$\_$8/ and KI was used. This etching solution was characteristic of anisotropic etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.84-84
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.71-79
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• 1996

Yttrium thin film, 580nm thick, was prepared by electron beam evaporation. Film was hydrogenated room temperature upto 40 bar hydrogen pressure, without any activation process. Hydrogen concentration was determined by a quartz-crystal microbalance(QCM) method. YH2.9 sample was made without any pulverization. Electrical resistance was measured by four-point DC method in the temperature range between room temperature and 30K for various hydrogen concentration, x=0 to 2.9 of YHx sample. Temperature dependent resistance of YH2.9 shows low temperature minimum at 105K, the metal-semiconductor transition at 260K, and a hystersis above 210K.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.261-263
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• 2008

We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.198-199
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Y_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 함께 유전적 특성을 관찰하였다. XRD 회절 운석을 통하여 $Y_2O_3$ 가 첨가된 모든 시편에서 전형적인 페로브스카이트 구조를 나타내는것을 알 수 있었다. 시편의 미세구조를 관찰한 결과 grain size 는 $Y_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Y_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $60{\mu}m$이었다. 유전상수는 $Y_2O_3$ 첨가량에 따라 감소하였으며, 유전손실은 모든 시편에서 1%이하의 양호한 값을 나타내었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.1
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• pp.9-13
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• 1982

The purpose of this experiment is to evaluate the noise dependency on the gate dimensions of the P-ch MOSFET which is fabricated of p+ sourse, drain, and gate electrode doped with PH$_3$ gas in type-N Si sudstrate. Experimental results indicate that: for the constant gate area and reletively thick films, noise level tends to decrease for the W/L ratio over unity, which generally conforms with theoretical observations, but its variation with the change in the thickness of film is less than the theoretically predicted for the W/L ratio below unity.

• Journal of Magnetics
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• v.14 no.4
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• pp.172-174
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• 2009

Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.384-386
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• 1999

The distribution coefficients of Ni and Zn to the Cu site in $La_{2-x}Sr_{x}CuO_{4}$(LCO) were investigated to determine the suitable solvent composition ofr crystal growth of $La_{2}{Cu}_{1-x}{M}_{x}{O}_{4}$(M=NI, Zn)(LCMO), and were found to be 4.2 for NI and 0.66 for Zn, respectively. Single crystals of LCO, and LCMO of high homogeneity were grown by traveling solvent floating zone technique using suitable solvents. NO diamagnetic signals were observed for all substituted crystals. This fact suggests that crystals of LCO partially substituted by Ni or Zn are useful as substrate crystals.