한국정보디스플레이학회:학술대회논문집
- 2008.10a
- /
- Pages.261-263
- /
- 2008
Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200 K)
- Kim, Tae-Hwan (Dept. of Nano Science and Technology, University of Seoul) ;
- Lee, Kyoung-Min (Dept. of Nano Science and Technology, University of Seoul) ;
- Hwang, Jae-Dam (Dept. of Nano Science and Technology, University of Seoul) ;
- Hong, Wan-Shick (Dept. of Nano Science and Technology, University of Seoul)
- Published : 2008.10.13
Abstract
We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.
Keywords