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http://dx.doi.org/10.4283/JMAG.2009.14.4.172

Magnetoresistance of Planar Ferromagnetic Junction Defined by Atomic Force Microscopy  

Yu, D.S. (Department of Physics and Institute of Fundamental Physics, Sejong University)
Jerng, S.K. (Department of Physics and Institute of Fundamental Physics, Sejong University)
Kim, Y.S. (Department of Physics and Institute of Fundamental Physics, Sejong University)
Chun, S.H. (Department of Physics and Institute of Fundamental Physics, Sejong University)
Publication Information
Journal of Magnetics / v.14, no.4, 2009 , pp. 172-174 More about this Journal
Abstract
Nanolithography by atomic force microscope local oxidation was applied to the fabrication of planar-type Ni/Ni oxide/Ni junctions from 10 nm-thick Ni films. The junction characteristics were sensitive to the lithography conditions such as the bias voltage. Successful oxidation produced junctions of nonlinear current-voltage characteristics, implying the formation of oxide barriers. Magnetoresistance (MR) at low temperatures resembled that of spin valves.
Keywords
AFM lithography; local oxidation; magnetic tunnel junction; magnetoresistance;
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