• Title/Summary/Keyword: Thick film technology

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바이오응용을 위한 압전 공진형 MEMS 소자

  • Kim Yong Bum;Kim Hyung Joon;Kang Ji-Yoon;Kim Tae Song
    • 한국가시화정보학회:학술대회논문집
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    • 2002.04a
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    • pp.1-7
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    • 2002
  • This papers describes the preparation and experimental results of a micro mass detection devices based on cantilever and a diffuser-type micro pump using screen printing thick-film technologies and Si micro-machining. PZT-PCW thick films were prepared by new hybrid method based on the screen printing. By applying these PZT-PCW piezoelectric thick films on actuator, a cantilever for mass detection sensor and a micropump for microfluidic element are successfully fabricated. Resonant frequency and displacement of PZT-PCW thick film actuator in air and in liquid are measured by laser vibrometer system as a function of actuator size. The resonant frequency of PZT-PCW thick film actuator in liquid decreases order of 1/2-1/4 due to damping effect. The sensitivity of cantilever is characterized by Au deposition method which has the mass loading effect such as adsorption of protein. The Sensitivity of PZT-0.12PCW thick film cantilever is proportional to detecting area.

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Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick $SiO_2$ Film

  • Komiya, Kenji;Omura, Yasuhisa
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.164-169
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    • 2002
  • This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

Microwave assisted processing of silver thick films for microelectronic applications

  • Rane, Sunit;Bhatkar, Rushna;Mulik, Uttam;Amalnerkar, Dinesh
    • Advances in materials Research
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    • v.2 no.3
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    • pp.133-140
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    • 2013
  • This paper aims to focus on the microwave processing of thick films which is a fast, cheap technique and could be the alternative to the currently used conventional high temperature processing technique. Microwave processing has gained worldwide acceptance as a novel method for heating and sintering a variety of materials, as it offers specific advantages in terms of speed, energy efficiency, process simplicity, finer microstructures and lower environmental hazards. Silver conducting thick films were prepared and processed in the household microwave oven. The films sintered at different time period by keeping the other parameter such as microwave power, film thickness etc constant. The microstructure analysis revealed that the surface morphology of the microwave processed films become compact with respect to the processing time. The sheet resistance for microwave sintered silver films is in the range of 0.003 to $1.207{\Omega}/{\Box}$ where as the films fired at 750 and $850^{\circ}C$ showed the resistance of 0.009 and $0.003{\Omega}/{\Box}$ which can be comparable. The results revealed that the microstructure of the microwave sintered films has more uniform and compact surface than that of the conventionally fired films. The paper reports upon the preparation of silver thick film by screen printing technique and processing the same by microwave which also compared with the conventionally processed thick films.

Influence of Metal-Coating Layer on an Electrical Resistivity of Thick-Film-Type Thermoelectric Modules Fabricated by a Screen Printing Process (스크린 프린팅 공정에 의해 제조된 열전후막모듈의 전기저항에 미치는 금속코팅층의 영향)

  • Kim, Kyung-Tae;Koo, Hye-Young;Ha, Gook-Hyun
    • Journal of Powder Materials
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    • v.18 no.5
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    • pp.423-429
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    • 2011
  • Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

Fabrication of Photoimageable Silver Paste for Low-Temperature Cofiring Using Acrylic Binder Polymers and Photosensitive Materials

  • Park, Seong-Dae;Yoo, Myong-Jae;Kang, Nam-Kee;Park, Jong-Chul;Lim, Jin-Kyu;Kim, Dong-Kook
    • Macromolecular Research
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    • v.12 no.4
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    • pp.391-398
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    • 2004
  • Thick-film photolithography is a new technology that combines lithography processes, such as exposure and development, with the conventional thick-film process applied to screen-printing. In this study, we developed a low-temperature cofireable silver paste applicable for thick-film processing to form fine lines using photolitho-graphic technologies. The optimum paste composition for forming fine lines was investigated. The effect of processing parameters, such as the exposing dose, had on the fine-line resolution was also investigated. As the result, we found that the type of polymer and monomer, the silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of the fine lines. The developed photoimageable silver paste was printed on a low-temperature cofireable green sheet, dried, exposed, developed in an aqueous process, laminated, and then fired. Our results demonstrate that thick-film fine lines having widths < 20 $\mu\textrm{m}$ can be obtained after cofiring.

EPD Thick Film Formation of Ceramic Powder Materials (세라믹 분말재료의 EPD 후막형성 기술)

  • Soh, Dea-Wha;Jeon, Yong-Woo
    • Journal of the Speleological Society of Korea
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    • no.75
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    • pp.49-54
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    • 2006
  • Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.

Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il;Lee, Bong-Yeon;Kim, Jeong-Seog;Bang, Kyu-Seok;Kim, Jun-Chul;Lee, Hyeung-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.20-23
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    • 2003
  • Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

Fabrication of Oxide Thick Film for Renewable Electrical Energy Storage Technology

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.186-189
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    • 2005
  • We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

Fabrication of Solid State Electrolyte Li7La3Zr2O12 thick Film by Tape Casting (테잎캐스팅을 이용한 전고체전해질 Li7La3Zr2O12 후막 제조)

  • Shin, Ran-Hee;Son, Samick;Ryu, Sung-Soo;Kim, Hyung-Tae;Han, Yoon-Soo
    • Journal of Powder Materials
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    • v.23 no.5
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    • pp.379-383
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    • 2016
  • A thick film of $Li_7La_3Zr_2O_{12}$ (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is $240{\mu}m$ which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is $2.81{\times}10^{-4}S/cm$, which is also similar to that of the bulk specimen, $2.54{\times}10^{-4}S/cm$. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.

The Study on the embedded capacitor using thick film lithography (후막 리소그라피 공정을 이용한 내장형 캐패시터 개발에 관한 연구)

  • Yoo, Chan-Sei;Park, Seong-Dae;Park, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.342-345
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    • 2002
  • As the size of chip components and module decreases, new patteming method for fine line and geometry is needed. So far, in LTCC(Low Temperature Cofired Ceramic) process, screen printing method has been used generally. But screen printing method has some disadvantages as follows. First, the geometry including line, vias, etc. smaller than $100{\mu}m$ can't be evaluated easily. Second, the patterned dimension is different from designed value, which makes distortion in charactersitics of not only chip components but also modules. Thick film lithography has advantages of thick film screen printing process, low cost and thin film process, fine line feasibility. Using this method, the line with $30{\mu}m$ width and the geometry with expected dimension can be evaluated. In this study, the fine line with $35{\mu}m$ line/space is formed and the embedded capacitor with very small tolerance is developed using thick film lithography.

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