• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.260-266
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• 2009

The anodic oxidation behaviour of a cast component of AC2A Al alloy with machined surface and ascast surface was investigated in sulfuric acid solution. The anodized specimen showed relatively uniform and thick anodic oxide films on the as-cast surface, while non-uniform and very thin oxide films were formed on the machined surface. Non-anodized as-cast surface was observed to be covered with thick oxide scales and showed a number of second-phase particles containing Si, while non-anodized machined surface showed no oxide scales and relatively very small number of Si particles. Thus, the very limited growth of anodic oxide films on the as-cast surface was attributed to the presence of thick oxide scales and Si-containing second-phase particles on its surface.

• Journal of Environmental Health Sciences
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• v.21 no.4
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• pp.24-31
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• 1995

Gas sensing element, $\alpha-Fe_2O_3$ was synthesized by dehydration, reduction, and oxidation of $\alpha-FeOOH$, which was synthesized with $FeSO_4\cdot 7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of carbon monoxide were studied. The qualities of gas sefising elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH$ synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM,TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha-FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$ responded more quickly than the bulk-type did. The structure and the relative surface area of the $\rho-FeOOH$ were confirmed as the important factors deciding gas response charcteristics.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.3
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• pp.685-692
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• 2024

Currently used heating elements are metal and non-metal heating elements, including various types of heaters, and resistance line heating elements have a problem of decreasing thermal efficiency over time, so to solve this problem, a planar heating element using high-purity carbon materials and oxidation-resistant inorganic compounds was applied. Through the manufacture of planar heating elements using CNT, ruthenium composite materials, and ruthenium oxide, physicochemical performance and capacity were increased, and instantaneous responsiveness was increased. Through thick film technology applicable to various base bodies, fine patterns were formed by the screening method in consideration of the fact that the performance of the heat source depends on the viscosity and pattern shape. The heating element was manufactured by thick film printing technology by mixing ruthenium oxide, CNT, Ag, etc. The characteristics of each paste were analyzed through viscosity measurement, and STS 430 was used as a base. Surface temperature and efficiency were measured by testing heaters manufactured for small wind tunnels and real-vehicle experiments. The surface temperature decreased as the air volume increased, and the optimal system boundary was found to be about 200 mm. Among the currently used heating elements, this paper manufactured a planar heating element using thick film technology to find out the relationship between air volume and temperature, and to study the surface temperature.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.141-147
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• 2003

Sputter-deposited Nb-Al-Cr alloys. $3-5{\mu}m$ thick, have been prepared on quartz substrates as oxidation-and sulfidation-resistant materials at high temperatures. The oxidation or the alloys in the $Ar-O_2$ atmosphere of an oxygen partial pressure of 20 kPa follows approximately the parabolic rate law, thus being diffusion controlled. Their oxidation rates are almost the same as or even lower than those ofthc typical chromia-forming alloys. The multi-lavered oxide scales are formed on the ternary alloys. The outermost layer is composed of $Cr_2O_3$, which is"mainly responsible for the high oxidation'resistance of these alloys. In contrast to sputter-deposited Cr-Nb binary alloys reported previously, the inner layer is not porous. TEM observation as well as EDX analysis indicates that the innermost layer is a mixture of $Al_2O_3$ and niobium oxide. The dispersion of $Al_2O_3$ in niobium oxide may be attributable to the prevention of the formation of the porous oxide layer. The sulfidation rates of the present ternary alloys arc higher than those of the sputter-deposited Nb-AI binary alloys, but still several orders of magnitude lower than those of conventional high temperature alloys. Two-layered sulfide scales are formed, consisting of an outer $Al_2S_3$ layer containing chromium and an inner layer composed of $NbS_2$ and a small amount of $Cr_2S_3$. The presence of $Cr_2S_3$ in the inner protective $NbS_2$ layer may be attributed to the increase in the sulfidation rates.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.79-83
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• 2007

To fabricate a thick, porous yttria-stabilized zirconia without cracking and warping, a method for the simultaneous control of the porosity and shrinkage was designed. As a pore former, a potato starch was used. For the control of shrinkage the oxidation of Al metal particles was used. For the sintering of the above powder mixtures, a partial sintering technique was used at $1300^{\circ}C$ for 10 min in air. Upon adding the additives, high open porosity above 53% and a low shrinkage level were obtained. As a result cracking and warping of the sintered body were deterred. This outcome most likely resulted from the compensation of sintering shrinkage due to the volume expansion caused by oxidation of the Al metal particles during heat-treatment.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.7
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

• Journal of the Korean Society of Safety
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• v.13 no.1
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• pp.47-53
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• 1998

Radiant heater tubes with an inside burner are designed to transfer the heat generated from the burner to the outside of the tube by radiation. Hence, tube metal must suffer high temperature of approximately 900-$1000^{\circ}C$. The radiant tube is usually manufactured by centrifugal casting with high Ni-Cr alloys. In this study, failure analysis results of the radiant tube are reported. Failure mechanism of the tube was investigated by visual observation of the foiled tube, metallographic study of the cracked region and chemical analysis of tube metal and oxide scales. It was argued that the main cause of the cracking is repeated oxidation of the tube metal located beneath the thick oxide scale. Oxidation was caused by abnormally high operating temperature which can be verified by aged microstructure and internal void formation.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.439-446
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• 2017

Plasma electrolyte oxidation (PEO) is a kind of anodization, in which a very high voltage or current is applied to a metal substrate in various electrolytes, allowing distinctly thick thickness of the oxide film with outstanding film properties, such as a good corrosion resistance, mechanical strength, thermal stability, and excellent adhesion to a substrate. Herein, we tried to find the optimal pretreatment conditions among commercially available solutions in order to produce PEO anodizing at relatively low voltage. We characterized the surface morphologies of the sample by scanning electron microscope (SEM), atomic force microscopy (AFM), and investigated color parameters of the pretreated surface of Ti by spectrophotometer.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.278-285
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• 1998

Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.