• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.685-688
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

• 한국세라믹학회지
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• 제30권12호
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• pp.1007-1014
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• 1993

YBa2Cu3Ox(YBCO) thick films were prepared by a screen printing of the powders, obtained by a coprecipitation in oxalic acid, on the Y2O3-stabilized zirconia substrates and their superconducting properties were determined. TC, JC and the orientation factor of the thick films increased with increasing temperature up to 103$0^{\circ}C$ and then the superconducting properties disappeared with further heat treatments. The optimization of JC was achieved by heating thick films at 103$0^{\circ}C$ for 7min. In this case the TC of the thick film was determined to be 87.5K. It was observed that TC of thick films depends on the orthorhombicity and JC is likely governed by a microstructure of YBCO rather than by the orientation factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.24-28
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• 2003

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1326-1331
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• 2003

Thick PZT films are required for the cases of micro actuators and sensors with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Total 8 types of samples using thick PZT films with thicknesses, about $1{\mu}m$ and $2{\mu}m$, and Pt top electrodes shapes for measuring transverse piezoelectric coefficient ($e_{31,f}$) were fabricated using MEMS processes. They were characterized by fabricated e31,f measurement system before and after poling. $e_{31,f}$ values of samples after poling were higher than before poling. Those of $2{\mu}m$ thick PZT films were also higher than $1{\mu}m$ thick PZT films. And those with long electrodes as top electrodes were also higher than shorter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1418-1419
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• 2006

PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.925-932
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• 1996

Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.